Spin valve Josephson junctions

C Bell; G Burnell; CW Leung; EJ Tarte; MG Blamire; Chris Bell

Spin valve Josephson junctions

C Bell^*, G Burnell, CW Leung, EJ Tarte, MG Blamire, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

4 Citations (Scopus)

Abstract

We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable pi-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported [1], the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co : Fe20Ni80 ratio.

Original language	English
Pages (from-to)	908-911
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2
Publication status	Published - Jun 2005
Event	2004 Applied Superconductivity Conference - Jacksonville, FL, United States Duration: 3 Oct 2004 → 8 Oct 2004

Keywords

Josephson junctions
magnetoresistive devices
FERROMAGNET
FILMS
SUPERCONDUCTORS
FABRICATION

Cite this

@article{2ea7ed7d31ea4eacb3eca603fba31ac6,

title = "Spin valve Josephson junctions",

abstract = "We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable pi-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported [1], the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co : Fe20Ni80 ratio.",

keywords = "Josephson junctions, magnetoresistive devices, FERROMAGNET, FILMS, SUPERCONDUCTORS, FABRICATION",

author = "C Bell and G Burnell and CW Leung and EJ Tarte and MG Blamire and Chris Bell",

year = "2005",

month = jun,

language = "English",

volume = "15",

pages = "908--911",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "2",

note = "2004 Applied Superconductivity Conference ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - JOUR

T1 - Spin valve Josephson junctions

AU - Bell, C

AU - Burnell, G

AU - Leung, CW

AU - Tarte, EJ

AU - Blamire, MG

AU - Bell, Chris

PY - 2005/6

Y1 - 2005/6

N2 - We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable pi-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported [1], the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co : Fe20Ni80 ratio.

AB - We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable pi-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported [1], the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co : Fe20Ni80 ratio.

KW - Josephson junctions

KW - magnetoresistive devices

KW - FERROMAGNET

KW - FILMS

KW - SUPERCONDUCTORS

KW - FABRICATION

M3 - Article (Academic Journal)

VL - 15

SP - 908

EP - 911

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

SN - 1051-8223

IS - 2

T2 - 2004 Applied Superconductivity Conference

Y2 - 3 October 2004 through 8 October 2004

ER -

Spin valve Josephson junctions

Abstract

Keywords

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