Stability of photonic band gap in the presence of disorder

M. A. Kaliteevski, D. M. Beggs, S. Brand, R. A. Abram

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

The photonic eigenmodes near a band gap of a type of one-dimensional disordered photonic crystal have been investigated statistically. For the system considered, it is found that the tail of the density of states entering the band gap is characterized by a certain penetration depth, which is proportional to the disorder parameter. A quantitative relation between the relative penetration depth, the relative width of the photonic band gap and the disorder has been found. It is apparent that there is a certain level of disorder below which the probability of the appearance of photonic eigenstates at the centre of the photonic band gap essentially vanishes.
Original languageUndefined/Unknown
Title of host publicationPhysics of Semiconductors, Pts A and B
EditorsW Jantsch, F Schaffler
Pages1159-1160
Number of pages2
Volume893
Publication statusPublished - 2007

Publication series

NameAIP CONFERENCE PROCEEDINGS

Bibliographical note

28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, JUL 24-28, 2006

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