Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs

Chengjun Shen; Saeed Jahdi; Mana Hosseinzadehlish; Phil Mellor; Konstantinos Floros; Ingo Lüdtke

doi:10.4028/p-NJz1qy

Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs

Chengjun Shen, Saeed Jahdi^*, Mana Hosseinzadehlish, Phil Mellor, Konstantinos Floros, Ingo Lüdtke

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

This paper compares the static properties for Silicon & SiC BJTs when connected in parallel, under various operating temperatures at various base currents and collector currents. This includes analysis of forward I-V characteristics, on-state resistance, DC gain, forward transfer characteristics and reverse leakage current to provide insights on paralleling of SiC & SiC BJTs.

Original language	English
Pages (from-to)	75-83
Number of pages	9
Journal	Key Engineering Materials
Volume	1021
DOIs	https://doi.org/10.4028/p-NJz1qy
Publication status	Published - 5 Sept 2025

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© 2025, Trans Tech Publications Ltd. All rights reserved.

Research Groups and Themes

Electrical Energy Management

Keywords

Power Electronics
Power Semiconductor Devices

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10.4028/p-NJz1qyLicence: CC BY

Full-text PDF (final published version)Final published version, 1.42 MBLicence: CC BY

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title = "Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon \& SiC NPN BJTs",

abstract = "This paper compares the static properties for Silicon \& SiC BJTs when connected in parallel, under various operating temperatures at various base currents and collector currents. This includes analysis of forward I-V characteristics, on-state resistance, DC gain, forward transfer characteristics and reverse leakage current to provide insights on paralleling of SiC \& SiC BJTs.",

keywords = "Power Electronics, Power Semiconductor Devices",

author = "Chengjun Shen and Saeed Jahdi and Mana Hosseinzadehlish and Phil Mellor and Konstantinos Floros and Ingo L{\"u}dtke",

year = "2025",

month = sep,

day = "5",

doi = "10.4028/p-NJz1qy",

language = "English",

volume = "1021",

pages = "75--83",

journal = "Key Engineering Materials",

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T1 - Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs

AU - Shen, Chengjun

AU - Jahdi, Saeed

AU - Hosseinzadehlish, Mana

AU - Mellor, Phil

AU - Floros, Konstantinos

AU - Lüdtke, Ingo

PY - 2025/9/5

Y1 - 2025/9/5

N2 - This paper compares the static properties for Silicon & SiC BJTs when connected in parallel, under various operating temperatures at various base currents and collector currents. This includes analysis of forward I-V characteristics, on-state resistance, DC gain, forward transfer characteristics and reverse leakage current to provide insights on paralleling of SiC & SiC BJTs.

AB - This paper compares the static properties for Silicon & SiC BJTs when connected in parallel, under various operating temperatures at various base currents and collector currents. This includes analysis of forward I-V characteristics, on-state resistance, DC gain, forward transfer characteristics and reverse leakage current to provide insights on paralleling of SiC & SiC BJTs.

KW - Power Electronics

KW - Power Semiconductor Devices

U2 - 10.4028/p-NJz1qy

DO - 10.4028/p-NJz1qy

M3 - Article (Academic Journal)

SN - 1013-9826

VL - 1021

SP - 75

EP - 83

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs

Abstract

Bibliographical note

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Keywords

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