Steady-State Analysis of Standalone Vertical Silicon & SiC NPN BJTs

Chengjun Shen; Saeed Jahdi; Mana Hosseinzadehlish; Phil Mellor; Konstantinos Floros; Ingo Ludtke

doi:10.1109/wipdaeurope62087.2024.10797297

Steady-State Analysis of Standalone Vertical Silicon & SiC NPN BJTs

Chengjun Shen
, Saeed Jahdi^*
, Mana Hosseinzadehlish
, Phil Mellor
, Konstantinos Floros
, Ingo Ludtke

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

SiC BJTs have enabled a significant increase in the DC current gain compared with their Silicon counterparts. The absence of the gate oxide, as a known reliability concern in S iC MOSFETs, has enabled high-gain S iC BJTs to find popularity in certain applications. This paper has investigated the temperature-dependance of vertical high voltage NPN Silicon and S iC BJTs and sheds light on the similarities and differences in static analysis. Measurements are conducted on key electrical properties: Transfer characteristics, Base-Emitter leakage Cur-rent (IR(BE)) , Collector-Emitter on-resistance (Ron) , DC common-Emitter current gain (β) and Output (I-V) characteristics.

Original language	English
Title of host publication	2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Place of Publication	Cardiff, United Kingdom
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	6
ISBN (Electronic)	9798350362404
ISBN (Print)	9798350362411
DOIs	https://doi.org/10.1109/wipdaeurope62087.2024.10797297
Publication status	Published - 19 Dec 2024
Event	2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe - Royal Welsh College of Music and Drama, Cardiff, United Kingdom Duration: 16 Sept 2024 → 18 Sept 2024 https://wipda-europe.org/

Conference

Conference	2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe
Abbreviated title	WiPDA Europe
Country/Territory	United Kingdom
City	Cardiff
Period	16/09/24 → 18/09/24
Internet address	https://wipda-europe.org/

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10.1109/wipdaeurope62087.2024.10797297

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Accepted author manuscript, 2.27 MBLicence: CC BY

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@inproceedings{a058ece5777841b4ba9e70c9587b51dd,

title = "Steady-State Analysis of Standalone Vertical Silicon \& SiC NPN BJTs",

abstract = "SiC BJTs have enabled a significant increase in the DC current gain compared with their Silicon counterparts. The absence of the gate oxide, as a known reliability concern in S iC MOSFETs, has enabled high-gain S iC BJTs to find popularity in certain applications. This paper has investigated the temperature-dependance of vertical high voltage NPN Silicon and S iC BJTs and sheds light on the similarities and differences in static analysis. Measurements are conducted on key electrical properties: Transfer characteristics, Base-Emitter leakage Cur-rent (IR(BE)) , Collector-Emitter on-resistance (Ron) , DC common-Emitter current gain (β) and Output (I-V) characteristics.",

author = "Chengjun Shen and Saeed Jahdi and Mana Hosseinzadehlish and Phil Mellor and Konstantinos Floros and Ingo Ludtke",

year = "2024",

month = dec,

day = "19",

doi = "10.1109/wipdaeurope62087.2024.10797297",

language = "English",

isbn = "9798350362411",

booktitle = "2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe ; Conference date: 16-09-2024 Through 18-09-2024",

url = "https://wipda-europe.org/",

}

Shen, C, Jahdi, S, Hosseinzadehlish, M, Mellor, P, Floros, K & Ludtke, I 2024, Steady-State Analysis of Standalone Vertical Silicon & SiC NPN BJTs. in 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Institute of Electrical and Electronics Engineers (IEEE), Cardiff, United Kingdom, 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, Cardiff, United Kingdom, 16/09/24. https://doi.org/10.1109/wipdaeurope62087.2024.10797297

Steady-State Analysis of Standalone Vertical Silicon & SiC NPN BJTs. / Shen, Chengjun; Jahdi, Saeed; Hosseinzadehlish, Mana et al.
2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Cardiff, United Kingdom: Institute of Electrical and Electronics Engineers (IEEE), 2024.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Steady-State Analysis of Standalone Vertical Silicon & SiC NPN BJTs

AU - Shen, Chengjun

AU - Jahdi, Saeed

AU - Hosseinzadehlish, Mana

AU - Mellor, Phil

AU - Floros, Konstantinos

AU - Ludtke, Ingo

PY - 2024/12/19

Y1 - 2024/12/19

N2 - SiC BJTs have enabled a significant increase in the DC current gain compared with their Silicon counterparts. The absence of the gate oxide, as a known reliability concern in S iC MOSFETs, has enabled high-gain S iC BJTs to find popularity in certain applications. This paper has investigated the temperature-dependance of vertical high voltage NPN Silicon and S iC BJTs and sheds light on the similarities and differences in static analysis. Measurements are conducted on key electrical properties: Transfer characteristics, Base-Emitter leakage Cur-rent (IR(BE)) , Collector-Emitter on-resistance (Ron) , DC common-Emitter current gain (β) and Output (I-V) characteristics.

AB - SiC BJTs have enabled a significant increase in the DC current gain compared with their Silicon counterparts. The absence of the gate oxide, as a known reliability concern in S iC MOSFETs, has enabled high-gain S iC BJTs to find popularity in certain applications. This paper has investigated the temperature-dependance of vertical high voltage NPN Silicon and S iC BJTs and sheds light on the similarities and differences in static analysis. Measurements are conducted on key electrical properties: Transfer characteristics, Base-Emitter leakage Cur-rent (IR(BE)) , Collector-Emitter on-resistance (Ron) , DC common-Emitter current gain (β) and Output (I-V) characteristics.

UR - https://wipda-europe.org/

U2 - 10.1109/wipdaeurope62087.2024.10797297

DO - 10.1109/wipdaeurope62087.2024.10797297

M3 - Conference Contribution (Conference Proceeding)

SN - 9798350362411

BT - 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Cardiff, United Kingdom

T2 - 2024 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe

Y2 - 16 September 2024 through 18 September 2024

ER -

Steady-State Analysis of Standalone Vertical Silicon & SiC NPN BJTs

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