STM characterization of the Si-P heterodimer

N.J. Curson, S.R. Schofield, M.Y. Simmons, JL O'Brien, R.G. Clark

Research output: Contribution to journalArticle (Academic Journal)peer-review

41 Citations (Scopus)


We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH3) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with ~0.002 langmuirs of PH3 results in the adsorption of PHx (x=2,3) onto the surface and etching of Si to form individual Si ad-dimers. Annealing to 350°C results in the incorporation of P into the surface layer to form Si-P heterodimers and the formation of short one-dimensional Si dimer chains and monohydrides. In filled state STM images, isolated Si-P heterodimers appear as zigzag features on the surface due to the static dimer buckling induced by the heterodimer. In the presence of a moderate coverage of monohydrides this static buckling is lifted, rending the Si-P heterodimers invisible in filled state images. However, we find that we can image the heterodimer at all H coverages using empty state imaging. The ability to identify single P atoms incorporated into Si(001) will be invaluable in the development of nanoscale electronic devices based on controlled atomic-scale doping of Si
Translated title of the contributionSTM characterization of the Si-P heterodimer
Original languageEnglish
Pages (from-to)195303-1 - 195303-5
Number of pages5
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume69 (19)
Publication statusPublished - May 2004

Bibliographical note

Publisher: American Physical Society


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