Stoichiometry control of the electronic properties of the LaAlO3/SrTiO3 heterointerface

H. K. Sato; C. Bell; Y. Hikita; H. Y. Hwang; Chris Bell

doi:10.1063/1.4812353

Stoichiometry control of the electronic properties of the LaAlO3/SrTiO3 heterointerface

H. K. Sato^*, C. Bell, Y. Hikita, H. Y. Hwang, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

60 Citations (Scopus)

Abstract

We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO3/SrTiO3 (001) heterostructures. The La/Al ratio in the LaAlO3 films was varied widely from 0.88 to 1.15, and was found to have a strong effect on the interface conductivity. In particular, the carrier density is modulated over more than two orders of magnitude. The film lattice expansion, caused by cation vacancies, is found to be the important functional parameter. These results can be understood to arise from the variations in the electrostatic boundary conditions, and their resolution, with stoichiometry. (C) 2013 AIP Publishing LLC.

Original language	English
Article number	251602
Number of pages	4
Journal	Applied Physics Letters
Volume	102
Issue number	25
DOIs	https://doi.org/10.1063/1.4812353
Publication status	Published - 24 Jun 2013

Keywords

INTERFACES
HETEROSTRUCTURES
HETEROJUNCTION
FILMS

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@article{9f21c76658874b1084eb3f7a868cf122,

title = "Stoichiometry control of the electronic properties of the LaAlO3/SrTiO3 heterointerface",

abstract = "We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO3/SrTiO3 (001) heterostructures. The La/Al ratio in the LaAlO3 films was varied widely from 0.88 to 1.15, and was found to have a strong effect on the interface conductivity. In particular, the carrier density is modulated over more than two orders of magnitude. The film lattice expansion, caused by cation vacancies, is found to be the important functional parameter. These results can be understood to arise from the variations in the electrostatic boundary conditions, and their resolution, with stoichiometry. (C) 2013 AIP Publishing LLC.",

keywords = "INTERFACES, HETEROSTRUCTURES, HETEROJUNCTION, FILMS",

author = "Sato, {H. K.} and C. Bell and Y. Hikita and Hwang, {H. Y.} and Chris Bell",

year = "2013",

month = jun,

day = "24",

doi = "10.1063/1.4812353",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

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TY - JOUR

T1 - Stoichiometry control of the electronic properties of the LaAlO3/SrTiO3 heterointerface

AU - Sato, H. K.

AU - Bell, C.

AU - Hikita, Y.

AU - Hwang, H. Y.

AU - Bell, Chris

PY - 2013/6/24

Y1 - 2013/6/24

N2 - We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO3/SrTiO3 (001) heterostructures. The La/Al ratio in the LaAlO3 films was varied widely from 0.88 to 1.15, and was found to have a strong effect on the interface conductivity. In particular, the carrier density is modulated over more than two orders of magnitude. The film lattice expansion, caused by cation vacancies, is found to be the important functional parameter. These results can be understood to arise from the variations in the electrostatic boundary conditions, and their resolution, with stoichiometry. (C) 2013 AIP Publishing LLC.

AB - We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO3/SrTiO3 (001) heterostructures. The La/Al ratio in the LaAlO3 films was varied widely from 0.88 to 1.15, and was found to have a strong effect on the interface conductivity. In particular, the carrier density is modulated over more than two orders of magnitude. The film lattice expansion, caused by cation vacancies, is found to be the important functional parameter. These results can be understood to arise from the variations in the electrostatic boundary conditions, and their resolution, with stoichiometry. (C) 2013 AIP Publishing LLC.

KW - INTERFACES

KW - HETEROSTRUCTURES

KW - HETEROJUNCTION

KW - FILMS

U2 - 10.1063/1.4812353

DO - 10.1063/1.4812353

M3 - Article (Academic Journal)

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 251602

ER -

Stoichiometry control of the electronic properties of the LaAlO3/SrTiO3 heterointerface

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