TY - GEN
T1 - Strain-balanced GaAs 1−x Bi x /GaN y As 1−y W-type quantum wells for GaAs-based 1.3-1.6 µm lasers
AU - Davidson, Zoe
PY - 2021/9/23
Y1 - 2021/9/23
N2 - Highly-mismatched alloys constitute a promising approach to extend the operational range of GaAs-based quantum well (QW) lasers to telecom wavelengths. This is challenging using type-I QWs due to the difficulty to incorporate sufficient N or Bi via epitaxial growth. To overcome this, we investigate a novel class of strain-compensated type-II QWs combining electron-confining, tensile strained GaNyAs1−y and hole-confining, compressively strained GaAs1−xBix layers. We systematically analyse the optoelectronic properties of W-type GaAs1−xBix/GaNyAs1−y QWs, and identify paths to optimise their threshold characteristics. Solving the multi-band k•p Schrödinger equation self-consistently with Poisson’s equation highlights the importance of electrostatic confinement in determining the optical and differential gain of these QWs. Our calculations demonstrate that GaAs1−xBix/GaNyAs1−y QWs offer broad scope for band structure engineering, with W-type structures presenting the possibility to combine high long-wavelength gain with the intrinsically low non-radiative Auger recombination rates of type-II QWs.
AB - Highly-mismatched alloys constitute a promising approach to extend the operational range of GaAs-based quantum well (QW) lasers to telecom wavelengths. This is challenging using type-I QWs due to the difficulty to incorporate sufficient N or Bi via epitaxial growth. To overcome this, we investigate a novel class of strain-compensated type-II QWs combining electron-confining, tensile strained GaNyAs1−y and hole-confining, compressively strained GaAs1−xBix layers. We systematically analyse the optoelectronic properties of W-type GaAs1−xBix/GaNyAs1−y QWs, and identify paths to optimise their threshold characteristics. Solving the multi-band k•p Schrödinger equation self-consistently with Poisson’s equation highlights the importance of electrostatic confinement in determining the optical and differential gain of these QWs. Our calculations demonstrate that GaAs1−xBix/GaNyAs1−y QWs offer broad scope for band structure engineering, with W-type structures presenting the possibility to combine high long-wavelength gain with the intrinsically low non-radiative Auger recombination rates of type-II QWs.
UR - https://www.researchgate.net/publication/352837585_Strain-balanced_GaAs_1-x_Bi_x_GaN_y_As_1-y_W-type_quantum_wells_for_GaAs-based_13-16_m_lasers
U2 - 10.1109/NUSOD52207.2021.9541434
DO - 10.1109/NUSOD52207.2021.9541434
M3 - Conference Contribution (Conference Proceeding)
SN - 9781665448369
T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices - NUSOD
BT - 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -