Strain dependence of bonding and hybridization across the metal-insulator transition of VO 2

J. Laverock*, L. F J Piper, A. R H Preston, B. Chen, J. McNulty, K. E. Smith, S. Kittiwatanakul, J. W. Lu, S. A. Wolf, P. A. Glans, J. H. Guo

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

25 Citations (Scopus)

Abstract

Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO 2. Changes in the strength of the V3d-O2p hybridization are observed across the transition and are linked to the structural distortion. Furthermore, although the V-V dimerization is well described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly strong dependence on strain that is not predicted by band theory, emphasizing the relevance of the O ion to the physics of VO 2.

Original languageEnglish
Article number081104
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume85
Issue number8
DOIs
Publication statusPublished - 10 Feb 2012

Fingerprint Dive into the research topics of 'Strain dependence of bonding and hybridization across the metal-insulator transition of VO 2'. Together they form a unique fingerprint.

Cite this