strengths for excitons bound to impurities and quantum wells

DC Herbert, JM Rorison

Research output: Contribution to journalArticle (Academic Journal)peer-review

5 Citations (Scopus)

Abstract

It is argued that electron-hole correlation can have a large effect on the oscillator strengths of bound excitons, and may help to explain the observations of shallow excited states for donor bound excitons in direct gap semiconductors. For quantum wells it is found that compression of the exciton wave function yields a 1/L dependence of oscillator strength on well width L for narrow wells
Translated title of the contributionstrengths for excitons bound to impurities and quantum wells
Original languageEnglish
Pages (from-to)343 - 345
Number of pages3
JournalSolid State Communications
Volume54 (4)
DOIs
Publication statusPublished - Apr 1985

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