strengths for excitons bound to impurities and quantum wells

DC Herbert; JM Rorison

doi:10.1016/0038-1098(85)90011-0

strengths for excitons bound to impurities and quantum wells

DC Herbert, JM Rorison

Department of Electrical & Electronic Engineering

Research output: Contribution to journal › Article (Academic Journal) › peer-review

5 Citations (Scopus)

Abstract

It is argued that electron-hole correlation can have a large effect on the oscillator strengths of bound excitons, and may help to explain the observations of shallow excited states for donor bound excitons in direct gap semiconductors. For quantum wells it is found that compression of the exciton wave function yields a 1/L dependence of oscillator strength on well width L for narrow wells

Translated title of the contribution	strengths for excitons bound to impurities and quantum wells
Original language	English
Pages (from-to)	343 - 345
Number of pages	3
Journal	Solid State Communications
Volume	54 (4)
DOIs	https://doi.org/10.1016/0038-1098(85)90011-0
Publication status	Published - Apr 1985

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@article{6b6a9c5e2a2b4e899976a9bacdcce140,

title = "strengths for excitons bound to impurities and quantum wells",

abstract = "It is argued that electron-hole correlation can have a large effect on the oscillator strengths of bound excitons, and may help to explain the observations of shallow excited states for donor bound excitons in direct gap semiconductors. For quantum wells it is found that compression of the exciton wave function yields a 1/L dependence of oscillator strength on well width L for narrow wells",

author = "DC Herbert and JM Rorison",

year = "1985",

month = apr,

doi = "10.1016/0038-1098(85)90011-0",

language = "English",

volume = "54 (4)",

pages = "343 -- 345",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - strengths for excitons bound to impurities and quantum wells

AU - Herbert, DC

AU - Rorison, JM

PY - 1985/4

Y1 - 1985/4

N2 - It is argued that electron-hole correlation can have a large effect on the oscillator strengths of bound excitons, and may help to explain the observations of shallow excited states for donor bound excitons in direct gap semiconductors. For quantum wells it is found that compression of the exciton wave function yields a 1/L dependence of oscillator strength on well width L for narrow wells

AB - It is argued that electron-hole correlation can have a large effect on the oscillator strengths of bound excitons, and may help to explain the observations of shallow excited states for donor bound excitons in direct gap semiconductors. For quantum wells it is found that compression of the exciton wave function yields a 1/L dependence of oscillator strength on well width L for narrow wells

U2 - 10.1016/0038-1098(85)90011-0

DO - 10.1016/0038-1098(85)90011-0

M3 - Article (Academic Journal)

VL - 54 (4)

SP - 343

EP - 345

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

ER -