Abstract
It is argued that electron-hole correlation can have a large effect on the oscillator strengths of bound excitons, and may help to explain the observations of shallow excited states for donor bound excitons in direct gap semiconductors. For quantum wells it is found that compression of the exciton wave function yields a 1/L dependence of oscillator strength on well width L for narrow wells
| Translated title of the contribution | strengths for excitons bound to impurities and quantum wells |
|---|---|
| Original language | English |
| Pages (from-to) | 343 - 345 |
| Number of pages | 3 |
| Journal | Solid State Communications |
| Volume | 54 (4) |
| DOIs | |
| Publication status | Published - Apr 1985 |
Research Groups and Themes
- Photonics and Quantum