Structural stability of β-Ga2O3 under ion irradiation

Alexander Petkov, David Cherns, Wei-Yin Chen, Junliang Liu, John Blevins, Vincent Gambin, Meimei Li, Dong Liu, Martin H H Kuball*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

7 Citations (Scopus)

Abstract

β-Ga2O3 was suggested to have excellent irradiation hardness which makes β-Ga2O3-based devices extremely attractive for nuclear and space applications. To discern the fundamental nano-scale structural changes with irradiation, an in situ irradiation experiment in a transmission electron microscope was carried out using 400 keV Ar ions of fluences up to 8 × 1015 cm−2 (equivalent to four displacements per atom). Contrary to previous works, which indicate a phase transition of β-Ga2O3 into the κ polymorph, the β-Ga2O3 structure was found to remain intact throughout except for (i) anisotropic lattice distortions, which are most significant at low levels of irradiation, and (ii) the appearance of additional weak reflections above 2 dpa irradiation. The origin of the extra reflections is discussed.
Original languageEnglish
Article number171903
Number of pages6
JournalApplied Physics Letters
Volume121
Issue number17
DOIs
Publication statusPublished - 26 Oct 2022

Bibliographical note

The authors gratefully acknowledge the NSUF Rapid
Turnaround Experiment Scheme for access to IVEM-Tandem User
Facility, Argonne National Laboratory, USA. The authors also
thank Mr. Peter Baldo (ANL, USA) for dedication on the operation
of the ion accelerator during the experiment. M.K. was supported
by the Royal Academy of Engineering through the Chair in
Emerging Technologies Scheme. D.L. was supported by the EPSRC
funding (Nos. EP/N004493/2 and EP/T000368/1).

Structured keywords

  • CDTR

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