Translated title of the contribution | Studies of defects, internal electric fields and micro-cathodoluminescence in GaN |
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Original language | English |
Pages (from-to) | 241 - 250 |
Number of pages | 10 |
Journal | Institute of Physics Conference Series |
Publication status | Published - 2001 |
Bibliographical note
Publisher: IoP Publishing LtdName and Venue of Conference: Int. Conf. on Microscopy of Semiconducting Materials, Oxford 25-29 March 2001
Conference Organiser: Institute of Physics
Other: Invited review