Studies of defects, internal electric fields and micro-cathodoluminescence in GaN

D Cherns

Studies of defects, internal electric fields and micro-cathodoluminescence in GaN

D Cherns

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	Studies of defects, internal electric fields and micro-cathodoluminescence in GaN
Original language	English
Pages (from-to)	241 - 250
Number of pages	10
Journal	Institute of Physics Conference Series
Publication status	Published - 2001

Bibliographical note

Publisher: IoP Publishing Ltd
Name and Venue of Conference: Int. Conf. on Microscopy of Semiconducting Materials, Oxford 25-29 March 2001
Conference Organiser: Institute of Physics
Other: Invited review

Cite this

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title = "Studies of defects, internal electric fields and micro-cathodoluminescence in GaN",

author = "D Cherns",

note = "Publisher: IoP Publishing Ltd Name and Venue of Conference: Int. Conf. on Microscopy of Semiconducting Materials, Oxford 25-29 March 2001 Conference Organiser: Institute of Physics Other: Invited review",

year = "2001",

language = "English",

pages = "241 -- 250",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

}

TY - JOUR

T1 - Studies of defects, internal electric fields and micro-cathodoluminescence in GaN

AU - Cherns, D

N1 - Publisher: IoP Publishing Ltd Name and Venue of Conference: Int. Conf. on Microscopy of Semiconducting Materials, Oxford 25-29 March 2001 Conference Organiser: Institute of Physics Other: Invited review

PY - 2001

Y1 - 2001

M3 - Article (Academic Journal)

SP - 241

EP - 250

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

SN - 0951-3248

ER -