Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Tommaso Brazzini; Michael A. Casbon; Huarui Sun; Michael Uren; Jonathan Lees; Paul J. Tasker; Helmut Jung; Hervé Blanck; Martin Kuball

doi:10.1016/j.microrel.2015.09.023

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

6 Citations (Scopus)

Abstract

Electroluminescencemicroscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.

Original language	English
Number of pages	6
Journal	Microelectronics Reliability
Volume	55
Issue number	12
DOIs	https://doi.org/10.1016/j.microrel.2015.09.023
Publication status	Published - 28 Sept 2015

Research Groups and Themes

CDTR

Keywords

Microwave field-effect transistor (FETs)
AlGaN/GaN
Electroluminescence
Class B
Class J
RF degradation
Hot-electrons
Electron temperature

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@article{92a3da50a6044b04834cc1e9d5c421cd,

title = "Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence",

abstract = "Electroluminescencemicroscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.",

keywords = "Microwave field-effect transistor (FETs), AlGaN/GaN, Electroluminescence, Class B, Class J, RF degradation, Hot-electrons, Electron temperature",

author = "Tommaso Brazzini and Casbon, {Michael A.} and Huarui Sun and Michael Uren and Jonathan Lees and Tasker, {Paul J.} and Helmut Jung and Herv{\'e} Blanck and Martin Kuball",

year = "2015",

month = sep,

day = "28",

doi = "10.1016/j.microrel.2015.09.023",

language = "English",

volume = "55",

journal = "Microelectronics Reliability",

publisher = "Elsevier",

number = "12",

}

TY - JOUR

T1 - Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

AU - Brazzini, Tommaso

AU - Casbon, Michael A.

AU - Sun, Huarui

AU - Uren, Michael

AU - Lees, Jonathan

AU - Tasker, Paul J.

AU - Jung, Helmut

AU - Blanck, Hervé

AU - Kuball, Martin

PY - 2015/9/28

Y1 - 2015/9/28

N2 - Electroluminescencemicroscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.

AB - Electroluminescencemicroscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.

KW - Microwave field-effect transistor (FETs)

KW - AlGaN/GaN

KW - Electroluminescence

KW - Class B

KW - Class J

KW - RF degradation

KW - Hot-electrons

KW - Electron temperature

UR - http://www.sciencedirect.com/science/article/pii/S0026271415301815

U2 - 10.1016/j.microrel.2015.09.023

DO - 10.1016/j.microrel.2015.09.023

M3 - Article (Academic Journal)

VL - 55

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 12

ER -

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Abstract

Research Groups and Themes

Keywords

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