Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

5 Citations (Scopus)

Abstract

Electroluminescencemicroscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.
Original languageEnglish
Number of pages6
JournalMicroelectronics Reliability
Volume55
Issue number12
DOIs
Publication statusPublished - 28 Sep 2015

Structured keywords

  • CDTR

Keywords

  • Microwave field-effect transistor (FETs)
  • AlGaN/GaN
  • Electroluminescence
  • Class B
  • Class J
  • RF degradation
  • Hot-electrons
  • Electron temperature

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