Subthreshold Mobility in AlGaN/GaN HEMTs

Will Waller; Martin Kuball; Michael Uren; Kean Boon Lee; Peter A. Houston; David J. Wallis; Ivor Guiney; Colin J.  Humphreys; Saurabh Pandey; Jan Šonský

doi:10.1109/TED.2016.2542588

Subthreshold Mobility in AlGaN/GaN HEMTs

Will Waller, Martin Kuball, Michael Uren, Kean Boon Lee, Peter A. Houston, David J. Wallis, Ivor Guiney, Colin J. Humphreys, Saurabh Pandey, Jan Šonský

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Abstract

Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.

Original language	English
Pages (from-to)	1861-1865
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	5
Early online date	30 Mar 2016
DOIs	https://doi.org/10.1109/TED.2016.2542588
Publication status	Published - May 2016

Research Groups and Themes

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Keywords

2-DEG mobility
AlGaN/GaN HEMT
series resistance

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10.1109/TED.2016.2542588

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7444181. Please refer to any applicable terms of use of the publisher.
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GaN Electronics: RF Reliability and Degradation Mechanisms.
Kuball, M. H. H. (Principal Investigator)
1/02/14 → 31/07/17
Project: Research

Cite this

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title = "Subthreshold Mobility in AlGaN/GaN HEMTs",

abstract = "Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.",

keywords = "2-DEG mobility, AlGaN/GaN HEMT, series resistance",

author = "Will Waller and Martin Kuball and Michael Uren and Lee, {Kean Boon} and Houston, {Peter A.} and Wallis, {David J.} and Ivor Guiney and Humphreys, {Colin J.} and Saurabh Pandey and Jan {\v S}onsk{\'y}",

year = "2016",

month = may,

doi = "10.1109/TED.2016.2542588",

language = "English",

volume = "63",

pages = "1861--1865",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Subthreshold Mobility in AlGaN/GaN HEMTs

AU - Waller, Will

AU - Kuball, Martin

AU - Uren, Michael

AU - Lee, Kean Boon

AU - Houston, Peter A.

AU - Wallis, David J.

AU - Guiney, Ivor

AU - Humphreys, Colin J.

AU - Pandey, Saurabh

AU - Šonský, Jan

PY - 2016/5

Y1 - 2016/5

N2 - Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.

AB - Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.

KW - 2-DEG mobility

KW - AlGaN/GaN HEMT

KW - series resistance

U2 - 10.1109/TED.2016.2542588

DO - 10.1109/TED.2016.2542588

M3 - Article (Academic Journal)

SN - 0018-9383

VL - 63

SP - 1861

EP - 1865

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Subthreshold Mobility in AlGaN/GaN HEMTs

Abstract

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Keywords

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Projects

GaN Electronics: RF Reliability and Degradation Mechanisms.

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