Subthreshold Mobility in AlGaN/GaN HEMTs

Will Waller; Martin Kuball; Michael Uren; Kean Boon Lee; Peter A. Houston; David J. Wallis; Ivor Guiney; Colin J.  Humphreys; Saurabh Pandey; Jan Šonský

doi:10.1109/TED.2016.2542588

Subthreshold Mobility in AlGaN/GaN HEMTs

Will Waller, Martin Kuball, Michael Uren, Kean Boon Lee, Peter A. Houston, David J. Wallis, Ivor Guiney, Colin J. Humphreys, Saurabh Pandey, Jan Šonský

Research output: Contribution to journal › Article (Academic Journal)

4 Citations (Scopus)

336 Downloads (Pure)

Abstract

Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.

Original language	English
Pages (from-to)	1861-1865
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	5
Early online date	30 Mar 2016
DOIs	https://doi.org/10.1109/TED.2016.2542588
Publication status	Published - May 2016

Structured keywords

CDTR

Keywords

2-DEG mobility
AlGaN/GaN HEMT
series resistance

Access to Document

10.1109/TED.2016.2542588

Full-text PDF (accepted author manuscript)
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Projects

1 Finished

GaN Electronics: RF Reliability and Degradation Mechanisms.

Kuball, M. H. H.

1/02/14 → 31/07/17

Project: Research

Cite this

Waller, W., Kuball, M., Uren, M., Lee, K. B., Houston, P. A., Wallis, D. J., Guiney, I., Humphreys, C. J., Pandey, S., & Šonský, J. (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 63(5), 1861-1865. https://doi.org/10.1109/TED.2016.2542588

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abstract = "Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.",

keywords = "2-DEG mobility, AlGaN/GaN HEMT, series resistance",

author = "Will Waller and Martin Kuball and Michael Uren and Lee, {Kean Boon} and Houston, {Peter A.} and Wallis, {David J.} and Ivor Guiney and Humphreys, {Colin J.} and Saurabh Pandey and Jan {\v S}onsk{\'y}",

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T1 - Subthreshold Mobility in AlGaN/GaN HEMTs

AU - Waller, Will

AU - Kuball, Martin

AU - Uren, Michael

AU - Lee, Kean Boon

AU - Houston, Peter A.

AU - Wallis, David J.

AU - Guiney, Ivor

AU - Humphreys, Colin J.

AU - Pandey, Saurabh

AU - Šonský, Jan

PY - 2016/5

Y1 - 2016/5

N2 - Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.

AB - Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.

KW - 2-DEG mobility

KW - AlGaN/GaN HEMT

KW - series resistance

U2 - 10.1109/TED.2016.2542588

DO - 10.1109/TED.2016.2542588

M3 - Article (Academic Journal)

VL - 63

SP - 1861

EP - 1865

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

ER -