Subthreshold Mobility in AlGaN/GaN HEMTs

Will Waller, Martin Kuball, Michael Uren, Kean Boon Lee, Peter A. Houston, David J. Wallis, Ivor Guiney, Colin J. Humphreys, Saurabh Pandey, Jan Šonský

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Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.
Original languageEnglish
Pages (from-to)1861-1865
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number5
Early online date30 Mar 2016
Publication statusPublished - May 2016

Structured keywords

  • CDTR


  • 2-DEG mobility
  • AlGaN/GaN HEMT
  • series resistance

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    Waller, W., Kuball, M., Uren, M., Lee, K. B., Houston, P. A., Wallis, D. J., Guiney, I., Humphreys, C. J., Pandey, S., & Šonský, J. (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 63(5), 1861-1865.