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Abstract
Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×1010 cm−2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ∼50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.
Original language | English |
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Pages (from-to) | 1861-1865 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 63 |
Issue number | 5 |
Early online date | 30 Mar 2016 |
DOIs | |
Publication status | Published - May 2016 |
Structured keywords
- CDTR
Keywords
- 2-DEG mobility
- AlGaN/GaN HEMT
- series resistance
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