Abstract
Transmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3degrees tilt between wing and seed areas, caused by additional nucleation oil the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.
| Translated title of the contribution | Superior structural quality of newly developed GaN pendeo-epitaxial layers |
|---|---|
| Original language | English |
| Pages (from-to) | 309 - 314 |
| Journal | Material Research Society Symposium Proceedings |
| Volume | 693 |
| Issue number | Symposium I – GaN and Related Alloys—2001 |
| Publication status | Published - 2002 |
Bibliographical note
Editors: Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert HISBN: 155899629X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2001 MRS Fall Meeting Boston
Conference Organiser: Materials Research Society