Transmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3degrees tilt between wing and seed areas, caused by additional nucleation oil the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.
|Translated title of the contribution||Superior structural quality of newly developed GaN pendeo-epitaxial layers|
|Pages (from-to)||309 - 314|
|Journal||Material Research Society Symposium Proceedings|
|Issue number||Symposium I – GaN and Related Alloys—2001|
|Publication status||Published - 2002|
Bibliographical noteEditors: Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2001 MRS Fall Meeting Boston
Conference Organiser: Materials Research Society
Liliental-Weber, Z., Jasinski, J., Cherns, D., Baines, MQ., & Davis, R. (2002). Superior structural quality of newly developed GaN pendeo-epitaxial layers. Material Research Society Symposium Proceedings, 693(Symposium I – GaN and Related Alloys—2001), 309 - 314.