Superior structural quality of newly developed GaN pendeo-epitaxial layers

Z Liliental-Weber, J Jasinski, D Cherns, MQ Baines, R Davis

Research output: Contribution to journalArticle (Academic Journal)peer-review

5 Citations (Scopus)


Transmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3degrees tilt between wing and seed areas, caused by additional nucleation oil the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.
Translated title of the contributionSuperior structural quality of newly developed GaN pendeo-epitaxial layers
Original languageEnglish
Pages (from-to)309 - 314
JournalMaterial Research Society Symposium Proceedings
Issue numberSymposium I – GaN and Related Alloys—2001
Publication statusPublished - 2002

Bibliographical note

Editors: Northrup JE, Neugebauer J, Look DC, Chichibu SF, Riechert H
ISBN: 155899629X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2001 MRS Fall Meeting Boston
Conference Organiser: Materials Research Society


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