Surface zeta potential and diamond seeding on gallium nitride films

Martin Kuball; Souman Mandal; Evan L. H. Thomas; Callum Middleton; Laia Gines; James Griffiths; Menno J. Kappers; Rachel A. Oliver; David J. Wallis; Lucy E. Goff; Stephen A. Lynch; Oliver Williams

doi:10.1021/acsomega.7b01069

Surface zeta potential and diamond seeding on gallium nitride films

Martin Kuball, Souman Mandal, Evan L. H. Thomas, Callum Middleton, Laia Gines, James Griffiths, Menno J. Kappers, Rachel A. Oliver, David J. Wallis, Lucy E. Goff, Stephen A. Lynch, Oliver Williams

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Abstract

Measurement of zeta potential of Ga and N-face gallium nitride has been
carried out as function of pH. Both the faces show negative zeta potential in
the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face
shows higher negative zeta potential due to larger concentration of adsorbed
oxygen. Zeta potential data clearly showed that H-terminated diamond seed
solution at pH 8 will be optimal for the self assembly of a monolayer of
diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond
films on GaN seeded with H-terminated diamond seeds produced fully coalesced
films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This
technique removes the requirement for a low thermal conduction seeding layer
like silicon nitride on GaN.

Original language	English
Pages (from-to)	7275-7280
Number of pages	6
Journal	ACS Omega
Volume	2
Issue number	10
Early online date	27 Oct 2017
DOIs	https://doi.org/10.1021/acsomega.7b01069
Publication status	Published - 31 Oct 2017

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Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs - 'GaN-DaME'
Kuball, M. H. H.
1/12/16 → 30/11/21
Project: Research, Parent

Cite this

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title = "Surface zeta potential and diamond seeding on gallium nitride films",

abstract = "Measurement of zeta potential of Ga and N-face gallium nitride has beencarried out as function of pH. Both the faces show negative zeta potential inthe pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-faceshows higher negative zeta potential due to larger concentration of adsorbedoxygen. Zeta potential data clearly showed that H-terminated diamond seedsolution at pH 8 will be optimal for the self assembly of a monolayer ofdiamond nanoparticles on the GaN surface. Subsequent growth of thin diamondfilms on GaN seeded with H-terminated diamond seeds produced fully coalescedfilms confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. Thistechnique removes the requirement for a low thermal conduction seeding layerlike silicon nitride on GaN.",

author = "Martin Kuball and Souman Mandal and {L. H. Thomas}, Evan and Callum Middleton and Laia Gines and James Griffiths and Kappers, {Menno J.} and Oliver, {Rachel A.} and Wallis, {David J.} and Goff, {Lucy E.} and Lynch, {Stephen A.} and Oliver Williams",

year = "2017",

month = oct,

day = "31",

doi = "10.1021/acsomega.7b01069",

language = "English",

volume = "2",

pages = "7275--7280",

journal = "ACS Omega",

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TY - JOUR

T1 - Surface zeta potential and diamond seeding on gallium nitride films

AU - Kuball, Martin

AU - Mandal, Souman

AU - L. H. Thomas, Evan

AU - Middleton, Callum

AU - Gines, Laia

AU - Griffiths, James

AU - Kappers, Menno J.

AU - Oliver, Rachel A.

AU - Wallis, David J.

AU - Goff, Lucy E.

AU - Lynch, Stephen A.

AU - Williams, Oliver

PY - 2017/10/31

Y1 - 2017/10/31

N2 - Measurement of zeta potential of Ga and N-face gallium nitride has beencarried out as function of pH. Both the faces show negative zeta potential inthe pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-faceshows higher negative zeta potential due to larger concentration of adsorbedoxygen. Zeta potential data clearly showed that H-terminated diamond seedsolution at pH 8 will be optimal for the self assembly of a monolayer ofdiamond nanoparticles on the GaN surface. Subsequent growth of thin diamondfilms on GaN seeded with H-terminated diamond seeds produced fully coalescedfilms confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. Thistechnique removes the requirement for a low thermal conduction seeding layerlike silicon nitride on GaN.

AB - Measurement of zeta potential of Ga and N-face gallium nitride has beencarried out as function of pH. Both the faces show negative zeta potential inthe pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-faceshows higher negative zeta potential due to larger concentration of adsorbedoxygen. Zeta potential data clearly showed that H-terminated diamond seedsolution at pH 8 will be optimal for the self assembly of a monolayer ofdiamond nanoparticles on the GaN surface. Subsequent growth of thin diamondfilms on GaN seeded with H-terminated diamond seeds produced fully coalescedfilms confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. Thistechnique removes the requirement for a low thermal conduction seeding layerlike silicon nitride on GaN.

U2 - 10.1021/acsomega.7b01069

DO - 10.1021/acsomega.7b01069

M3 - Article (Academic Journal)

C2 - 31457302

VL - 2

SP - 7275

EP - 7280

JO - ACS Omega

JF - ACS Omega

SN - 2470-1343

IS - 10

ER -

Surface zeta potential and diamond seeding on gallium nitride films

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Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs - 'GaN-DaME'

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