Surface zeta potential and diamond seeding on gallium nitride films

Martin Kuball, S. Mandal, Evan L. H. Thomas, Callum Middleton, Laia Gines, James Griffiths, Menno J. Kappers, Rachel A. Oliver, David J. Wallis, Lucy E. Goff, Stephen A. Lynch, Oliver Williams

Research output: Contribution to journalArticle (Academic Journal)

14 Citations (Scopus)
282 Downloads (Pure)

Abstract

Measurement of zeta potential of Ga and N-face gallium nitride has been
carried out as function of pH. Both the faces show negative zeta potential in
the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face
shows higher negative zeta potential due to larger concentration of adsorbed
oxygen. Zeta potential data clearly showed that H-terminated diamond seed
solution at pH 8 will be optimal for the self assembly of a monolayer of
diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond
films on GaN seeded with H-terminated diamond seeds produced fully coalesced
films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This
technique removes the requirement for a low thermal conduction seeding layer
like silicon nitride on GaN.
Original languageEnglish
Pages (from-to)7275-7280
Number of pages6
JournalACS Omega
Volume2
Issue number10
Early online date27 Oct 2017
DOIs
Publication statusPublished - 31 Oct 2017

Structured keywords

  • CDTR

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