Surface zeta potential and diamond seeding on gallium nitride films

Martin Kuball; Souman Mandal; Evan L. H. Thomas; Callum Middleton; Laia Gines; James Griffiths; Menno J. Kappers; Rachel A. Oliver; David J. Wallis; Lucy E. Goff; Stephen A. Lynch; Oliver Williams

doi:10.1021/acsomega.7b01069

Surface zeta potential and diamond seeding on gallium nitride films

Martin Kuball
, Souman Mandal
, Evan L. H. Thomas
, Callum Middleton
, Laia Gines
, James Griffiths
, Menno J. Kappers
, Rachel A. Oliver
, David J. Wallis
, Lucy E. Goff
, Stephen A. Lynch
, Oliver Williams

Research output: Contribution to journal › Article (Academic Journal) › peer-review

39 Citations (Scopus)

477 Downloads (Pure)

Abstract

Measurement of zeta potential of Ga and N-face gallium nitride has been
carried out as function of pH. Both the faces show negative zeta potential in
the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face
shows higher negative zeta potential due to larger concentration of adsorbed
oxygen. Zeta potential data clearly showed that H-terminated diamond seed
solution at pH 8 will be optimal for the self assembly of a monolayer of
diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond
films on GaN seeded with H-terminated diamond seeds produced fully coalesced
films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This
technique removes the requirement for a low thermal conduction seeding layer
like silicon nitride on GaN.

Original language	English
Pages (from-to)	7275-7280
Number of pages	6
Journal	ACS Omega
Volume	2
Issue number	10
Early online date	27 Oct 2017
DOIs	https://doi.org/10.1021/acsomega.7b01069
Publication status	Published - 31 Oct 2017

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Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs - 'GaN-DaME'
Kuball, M. H. H. (Principal Investigator)
1/12/16 → 30/11/21
Project: Research, Parent

Cite this

@article{3ad7abecabd2470abe019b5ecba9ec12,

title = "Surface zeta potential and diamond seeding on gallium nitride films",

abstract = "Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films confirming a seeding density in excess of 10\$\textasciicircum{}\{12\}\$ cm\$\textasciicircum{}\{-2\}\$. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN. ",

author = "Martin Kuball and Souman Mandal and \{L. H. Thomas\}, Evan and Callum Middleton and Laia Gines and James Griffiths and Kappers, \{Menno J.\} and Oliver, \{Rachel A.\} and Wallis, \{David J.\} and Goff, \{Lucy E.\} and Lynch, \{Stephen A.\} and Oliver Williams",

year = "2017",

month = oct,

day = "31",

doi = "10.1021/acsomega.7b01069",

language = "English",

volume = "2",

pages = "7275--7280",

journal = "ACS Omega",

issn = "2470-1343",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Surface zeta potential and diamond seeding on gallium nitride films

AU - Kuball, Martin

AU - Mandal, Souman

AU - L. H. Thomas, Evan

AU - Middleton, Callum

AU - Gines, Laia

AU - Griffiths, James

AU - Kappers, Menno J.

AU - Oliver, Rachel A.

AU - Wallis, David J.

AU - Goff, Lucy E.

AU - Lynch, Stephen A.

AU - Williams, Oliver

PY - 2017/10/31

Y1 - 2017/10/31

N2 - Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.

AB - Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.

U2 - 10.1021/acsomega.7b01069

DO - 10.1021/acsomega.7b01069

M3 - Article (Academic Journal)

C2 - 31457302

SN - 2470-1343

VL - 2

SP - 7275

EP - 7280

JO - ACS Omega

JF - ACS Omega

IS - 10

ER -

Surface zeta potential and diamond seeding on gallium nitride films

Abstract

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Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs - 'GaN-DaME'

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