@inproceedings{0a5ec65426124750900864ee57b6d92b,
title = "Tailoring broadband gain incorporating quantum dot fluctuations for a GaInNAs semiconductor optical amplifier",
abstract = "It has been observed experimentally that the band edge photoluminescence (PL) of GaxIn1-xNyAs1-y quantum well (QW) materials is broadened due to compositional fluctuations with N distribution. These fluctuations can be modelled as quantum dot-like region at the conduction band minimum in as-grown GaInNAs/GaAs QWs. We have developed a rate-equation approach to describe the distribution of electrons in the QW and QD-like fluctuations which include the carrier recombination from both the conventional 2D QW layer and the inhomogeneous dot-like fluctuations. The electron dynamics in the QW and QDs states are examined and the resulting carrier population and broadband gain is derived for a single QW. This is then applied to the design of a broadband gain multi-QW semiconductor optical amplifier (SOA). (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
keywords = "GaInNAs, QD fluctuations, broadband gain, LASER-DIODES, ALLOYS, WELLS, GAAS, GAP",
author = "X. Sun and N. Vogiatzis and Rorison, {J. M.}",
year = "2013",
doi = "10.1002/pssc.201200522",
language = "English",
isbn = "*****************",
series = "Physica Status Solidi C-Current Topics in Solid State Physics",
publisher = "Wiley-VCH Verlag",
pages = "573--576",
editor = "S Calvez and J Rorison and M Guina and D Alexandropoulos and N Balkan",
booktitle = "PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4",
address = "Germany",
note = "E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds ; Conference date: 14-05-2012 Through 18-05-2012",
}