Tailoring broadband gain incorporating quantum dot fluctuations for a GaInNAs semiconductor optical amplifier

X. Sun*, N. Vogiatzis, J. M. Rorison

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

It has been observed experimentally that the band edge photoluminescence (PL) of GaxIn1-xNyAs1-y quantum well (QW) materials is broadened due to compositional fluctuations with N distribution. These fluctuations can be modelled as quantum dot-like region at the conduction band minimum in as-grown GaInNAs/GaAs QWs. We have developed a rate-equation approach to describe the distribution of electrons in the QW and QD-like fluctuations which include the carrier recombination from both the conventional 2D QW layer and the inhomogeneous dot-like fluctuations. The electron dynamics in the QW and QDs states are examined and the resulting carrier population and broadband gain is derived for a single QW. This is then applied to the design of a broadband gain multi-QW semiconductor optical amplifier (SOA). (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Original languageEnglish
Title of host publicationPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4
EditorsS Calvez, J Rorison, M Guina, D Alexandropoulos, N Balkan
Place of PublicationWEINHEIM
PublisherWiley-VCH Verlag
Pages573-576
Number of pages4
ISBN (Print)*****************
DOIs
Publication statusPublished - 2013
EventE-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds - Strasbourg, France
Duration: 14 May 201218 May 2012

Publication series

NamePhysica Status Solidi C-Current Topics in Solid State Physics
PublisherWILEY-V C H VERLAG GMBH
Volume10
ISSN (Print)1862-6351

Conference

ConferenceE-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds
CountryFrance
Period14/05/1218/05/12

Keywords

  • GaInNAs
  • QD fluctuations
  • broadband gain
  • LASER-DIODES
  • ALLOYS
  • WELLS
  • GAAS
  • GAP

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