TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT

Mana Hosseinzadehlish; Saeed Jahdi; Xibo Yuan; Konstantinos Floros

doi:10.1109/ECCE55643.2024.10861697

TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT

Mana Hosseinzadehlish, Saeed Jahdi^*, Xibo Yuan, Konstantinos Floros

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

53 Downloads (Pure)

Abstract

This paper presents experimental evaluation of dynamic performance of high voltage 4H-SiC NPN BJT, analysed through modelling in Silvaco TCAD. The measurements are performed with a DC-link voltage of 800 V at peak collector current of 14 A with different base currents and load inductors. The TCAD model is validated by comparing its output static characteristics with datasheet. The absence of delay in 4H-SiC BJTs is due to the lower minority carrier lifetime and thinner base region, enabling higher DC current gain and significantly faster transients. However, a current drop phenomenon is visible in steady-state operation of 4H-SiC BJT, seen in both measurements and TCAD modelling. This is due to the peak collector current for a fixed base current impacted by its thinner base and the Early effect.

Original language	English
Title of host publication	2024 IEEE Energy Conversion Congress and Exposition (ECCE)
Place of Publication	Phoenix, AZ, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	6856-6858
Number of pages	3
ISBN (Electronic)	9798350376067, 9798350376050
ISBN (Print)	9798350376074
DOIs	https://doi.org/10.1109/ECCE55643.2024.10861697
Publication status	Published - 10 Feb 2025
Event	IEEE Energy Conversion Congress & Exposition 2024 - Phoenix Convention Centre, Phoenix, United States Duration: 20 Oct 2024 → 24 Oct 2024 https://www.ieee-ecce.org/2024/

Publication series

Name	IEEE Energy Conversion Congress and Exposition (ECCE)
Publisher	IEEE
ISSN (Print)	2329-3721
ISSN (Electronic)	2329-3748

Conference

Conference	IEEE Energy Conversion Congress & Exposition 2024
Abbreviated title	ECCE 2024
Country/Territory	United States
City	Phoenix
Period	20/10/24 → 24/10/24
Internet address	https://www.ieee-ecce.org/2024/

Bibliographical note

Publisher Copyright:
© 2024 IEEE.

Access to Document

10.1109/ECCE55643.2024.10861697

Full-text PDF (accepted manuscript)
This is the accepted author manuscript (AAM) of the article which has been made Open Access under the University of Bristol's Scholarly Works Policy. The final published version (Version of Record) can be found on the publisher's website. The copyright of any third-party content, such as images, remains with the copyright holder.
Accepted author manuscript, 1.43 MBLicence: CC BY

https://ieeexplore.ieee.org/abstract/document/10861697

Handle.net

Persistent link

Cite this

Hosseinzadehlish, M., Jahdi, S., Yuan, X., & Floros, K. (2025). TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT. In 2024 IEEE Energy Conversion Congress and Exposition (ECCE) (pp. 6856-6858). (IEEE Energy Conversion Congress and Exposition (ECCE)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ECCE55643.2024.10861697

@inproceedings{c9cfa0f446d0496d9e682a7eaa958acc,

title = "TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT",

abstract = "This paper presents experimental evaluation of dynamic performance of high voltage 4H-SiC NPN BJT, analysed through modelling in Silvaco TCAD. The measurements are performed with a DC-link voltage of 800 V at peak collector current of 14 A with different base currents and load inductors. The TCAD model is validated by comparing its output static characteristics with datasheet. The absence of delay in 4H-SiC BJTs is due to the lower minority carrier lifetime and thinner base region, enabling higher DC current gain and significantly faster transients. However, a current drop phenomenon is visible in steady-state operation of 4H-SiC BJT, seen in both measurements and TCAD modelling. This is due to the peak collector current for a fixed base current impacted by its thinner base and the Early effect.",

author = "Mana Hosseinzadehlish and Saeed Jahdi and Xibo Yuan and Konstantinos Floros",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; IEEE Energy Conversion Congress \& Exposition 2024, ECCE 2024 ; Conference date: 20-10-2024 Through 24-10-2024",

year = "2025",

month = feb,

day = "10",

doi = "10.1109/ECCE55643.2024.10861697",

language = "English",

isbn = "9798350376074",

series = "IEEE Energy Conversion Congress and Exposition (ECCE)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "6856--6858",

booktitle = "2024 IEEE Energy Conversion Congress and Exposition (ECCE)",

address = "United States",

url = "https://www.ieee-ecce.org/2024/",

}

Hosseinzadehlish, M , Jahdi, S, Yuan, X & Floros, K 2025, TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT. in 2024 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Energy Conversion Congress and Exposition (ECCE), Institute of Electrical and Electronics Engineers (IEEE), Phoenix, AZ, USA, pp. 6856-6858, IEEE Energy Conversion Congress & Exposition 2024, Phoenix, Arizona, United States, 20/10/24. https://doi.org/10.1109/ECCE55643.2024.10861697

TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT. / Hosseinzadehlish, Mana ; Jahdi, Saeed; Yuan, Xibo et al.
2024 IEEE Energy Conversion Congress and Exposition (ECCE). Phoenix, AZ, USA: Institute of Electrical and Electronics Engineers (IEEE), 2025. p. 6856-6858 (IEEE Energy Conversion Congress and Exposition (ECCE)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT

AU - Hosseinzadehlish, Mana

AU - Jahdi, Saeed

AU - Yuan, Xibo

AU - Floros, Konstantinos

PY - 2025/2/10

Y1 - 2025/2/10

N2 - This paper presents experimental evaluation of dynamic performance of high voltage 4H-SiC NPN BJT, analysed through modelling in Silvaco TCAD. The measurements are performed with a DC-link voltage of 800 V at peak collector current of 14 A with different base currents and load inductors. The TCAD model is validated by comparing its output static characteristics with datasheet. The absence of delay in 4H-SiC BJTs is due to the lower minority carrier lifetime and thinner base region, enabling higher DC current gain and significantly faster transients. However, a current drop phenomenon is visible in steady-state operation of 4H-SiC BJT, seen in both measurements and TCAD modelling. This is due to the peak collector current for a fixed base current impacted by its thinner base and the Early effect.

AB - This paper presents experimental evaluation of dynamic performance of high voltage 4H-SiC NPN BJT, analysed through modelling in Silvaco TCAD. The measurements are performed with a DC-link voltage of 800 V at peak collector current of 14 A with different base currents and load inductors. The TCAD model is validated by comparing its output static characteristics with datasheet. The absence of delay in 4H-SiC BJTs is due to the lower minority carrier lifetime and thinner base region, enabling higher DC current gain and significantly faster transients. However, a current drop phenomenon is visible in steady-state operation of 4H-SiC BJT, seen in both measurements and TCAD modelling. This is due to the peak collector current for a fixed base current impacted by its thinner base and the Early effect.

UR - https://www.ieee-ecce.org/2024/

U2 - 10.1109/ECCE55643.2024.10861697

DO - 10.1109/ECCE55643.2024.10861697

M3 - Conference Contribution (Conference Proceeding)

SN - 9798350376074

T3 - IEEE Energy Conversion Congress and Exposition (ECCE)

SP - 6856

EP - 6858

BT - 2024 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Phoenix, AZ, USA

T2 - IEEE Energy Conversion Congress & Exposition 2024

Y2 - 20 October 2024 through 24 October 2024

ER -

TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Handle.net

Other files and links

Fingerprint

Analysis of Electrothermal Reliability of Unipolar and Bipolar 4H-SiC Power Transistors

Cite this

TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Handle.net

Other files and links

Fingerprint

Student theses

Analysis of Electrothermal Reliability of Unipolar and Bipolar 4H-SiC Power Transistors

Cite this