Technology and application of in-situ AlOx layers on III-V semiconductors

R. Kúdela; J. Šoltýs; M. Kučera; R. Stoklas; F. Gucmann; M. Blaho; M. Mičušík; O. Pohorelec; M. Gregor; I. Brytavskyi; E. Dobročka; D. Gregušová

doi:10.1016/j.apsusc.2018.06.229

Technology and application of in-situ AlO_x layers on III-V semiconductors

R. Kúdela, J. Šoltýs, M. Kučera, R. Stoklas, F. Gucmann, M. Blaho, M. Mičušík, O. Pohorelec, M. Gregor, I. Brytavskyi, E. Dobročka, D. Gregušová^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

2 Citations (Scopus)

Abstract

This work describes the preparation of a passivation AlO_x layer grown in-situ in an MOVPE reactor immediately after the growth of a III-V semiconductor structure. Aluminum layers were deposited on GaAs surface at temperatures of 650, 600, 500, and 450 °C, and AlO_x layers were formed spontaneously from the Al layers upon exposing the surface to the air outside the reactor. The best thickness uniformity of the AlO_x layers was observed for a deposition temperature of 450 °C. Significantly higher drain current densities were achieved for high electron-mobility transistors (HEMTs) prepared on structures with the AlO_x layers. We attribute this to a better surface stability of the structures during device processing.

Original language	English
Pages (from-to)	33-38
Number of pages	6
Journal	Applied Surface Science
Volume	461
Early online date	28 Jun 2018
DOIs	https://doi.org/10.1016/j.apsusc.2018.06.229
Publication status	Published - 15 Dec 2018

Keywords

Al-oxide
GaAs
Heterostructure
In-situ deposition
MOCVD
XPS analysis

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@article{aeaa1b1b04c1408d83307d355dcfaf05,

title = "Technology and application of in-situ AlOx layers on III-V semiconductors",

abstract = "This work describes the preparation of a passivation AlOx layer grown in-situ in an MOVPE reactor immediately after the growth of a III-V semiconductor structure. Aluminum layers were deposited on GaAs surface at temperatures of 650, 600, 500, and 450 °C, and AlOx layers were formed spontaneously from the Al layers upon exposing the surface to the air outside the reactor. The best thickness uniformity of the AlOx layers was observed for a deposition temperature of 450 °C. Significantly higher drain current densities were achieved for high electron-mobility transistors (HEMTs) prepared on structures with the AlOx layers. We attribute this to a better surface stability of the structures during device processing.",

keywords = "Al-oxide, GaAs, Heterostructure, In-situ deposition, MOCVD, XPS analysis",

author = "R. K{\'u}dela and J. {\v S}olt{\'y}s and M. Ku{\v c}era and R. Stoklas and F. Gucmann and M. Blaho and M. Mi{\v c}u{\v s}{\'i}k and O. Pohorelec and M. Gregor and I. Brytavskyi and E. Dobro{\v c}ka and D. Gregu{\v s}ov{\'a}",

year = "2018",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2018.06.229",

language = "English",

volume = "461",

pages = "33--38",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Technology and application of in-situ AlOx layers on III-V semiconductors

AU - Kúdela, R.

AU - Šoltýs, J.

AU - Kučera, M.

AU - Stoklas, R.

AU - Gucmann, F.

AU - Blaho, M.

AU - Mičušík, M.

AU - Pohorelec, O.

AU - Gregor, M.

AU - Brytavskyi, I.

AU - Dobročka, E.

AU - Gregušová, D.

PY - 2018/12/15

Y1 - 2018/12/15

N2 - This work describes the preparation of a passivation AlOx layer grown in-situ in an MOVPE reactor immediately after the growth of a III-V semiconductor structure. Aluminum layers were deposited on GaAs surface at temperatures of 650, 600, 500, and 450 °C, and AlOx layers were formed spontaneously from the Al layers upon exposing the surface to the air outside the reactor. The best thickness uniformity of the AlOx layers was observed for a deposition temperature of 450 °C. Significantly higher drain current densities were achieved for high electron-mobility transistors (HEMTs) prepared on structures with the AlOx layers. We attribute this to a better surface stability of the structures during device processing.

AB - This work describes the preparation of a passivation AlOx layer grown in-situ in an MOVPE reactor immediately after the growth of a III-V semiconductor structure. Aluminum layers were deposited on GaAs surface at temperatures of 650, 600, 500, and 450 °C, and AlOx layers were formed spontaneously from the Al layers upon exposing the surface to the air outside the reactor. The best thickness uniformity of the AlOx layers was observed for a deposition temperature of 450 °C. Significantly higher drain current densities were achieved for high electron-mobility transistors (HEMTs) prepared on structures with the AlOx layers. We attribute this to a better surface stability of the structures during device processing.

KW - Al-oxide

KW - GaAs

KW - Heterostructure

KW - In-situ deposition

KW - MOCVD

KW - XPS analysis

UR - http://www.scopus.com/inward/record.url?scp=85049306739&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2018.06.229

DO - 10.1016/j.apsusc.2018.06.229

M3 - Article (Academic Journal)

AN - SCOPUS:85049306739

SN - 0169-4332

VL - 461

SP - 33

EP - 38

JO - Applied Surface Science

JF - Applied Surface Science

ER -