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Technology and application of in-situ AlOx layers on III-V semiconductors

Research output: Contribution to journalArticle

  • R. Kúdela
  • J. Šoltýs
  • M. Kučera
  • R. Stoklas
  • F. Gucmann
  • M. Blaho
  • M. Mičušík
  • O. Pohorelec
  • M. Gregor
  • I. Brytavskyi
  • E. Dobročka
  • D. Gregušová
Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalApplied Surface Science
Volume461
Early online date28 Jun 2018
DOIs
DateAccepted/In press - 25 Jun 2018
DateE-pub ahead of print - 28 Jun 2018
DatePublished (current) - 15 Dec 2018

Abstract

This work describes the preparation of a passivation AlOx layer grown in-situ in an MOVPE reactor immediately after the growth of a III-V semiconductor structure. Aluminum layers were deposited on GaAs surface at temperatures of 650, 600, 500, and 450 °C, and AlOx layers were formed spontaneously from the Al layers upon exposing the surface to the air outside the reactor. The best thickness uniformity of the AlOx layers was observed for a deposition temperature of 450 °C. Significantly higher drain current densities were achieved for high electron-mobility transistors (HEMTs) prepared on structures with the AlOx layers. We attribute this to a better surface stability of the structures during device processing.

    Research areas

  • Al-oxide, GaAs, Heterostructure, In-situ deposition, MOCVD, XPS analysis

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