Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography

T. Batten, A. Manoi, M. J. Uren, T. Martin, M. Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

25 Citations (Scopus)

Abstract

Photoluminescence (PL) spectroscopy was used to determine lateral temperature distributions in AlGaN/GaN based devices. Results are compared to Raman thermography data and to thermal modeling to assess challenges in the determination of temperature in devices using PL analysis and corresponding solutions. In conjunction with Raman thermography, the vertical temperature distribution in the devices is determined and the thermal boundary resistance at the GaN/SiC interface extracted. (C) 2010 American Institute of Physics. [doi:10.1063/1.3359651]

Original languageEnglish
Article number074502
Pages (from-to)-
Number of pages5
JournalJournal of Applied Physics
Volume107
Issue number7
DOIs
Publication statusPublished - 1 Apr 2010

Structured keywords

  • CDTR

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