Temperature and diDS/dt dependence of the switching energy of SiC Schottky diodes in clamped inductive switching applications

Saeed Jahdi*, Olayiwola Alatise, Phil A. Mawby

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

This paper presents the temperature and switching rate dependence of 1.2 kV/30 A SiC Schottky diode energy losses in clamped inductive switching circuits with 1.2 kV/30 A SiC MOSFETs as the switching transistors. The devices are tested under an ambient temperature range that spans from -75°C to 175°C and with switching rates that span from 10 to 100 A/μs. Due to the abruptness of the diode turn-OFF, low series resistance and the lack of reverse recovery, SiC SBDs are known to exhibit ringing or electromagnetic oscillations in the presence of parasitic inductances and high switching rates [1]. The impact of these electromagnetic oscillations on the switching energy, the dependence of the switching energy on temperature and the switching rate (diDS/dt) is the purpose of this paper's investigation.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2013
PublisherTrans Tech Publications Inc
Pages816-819
Number of pages4
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 1 Jan 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: 29 Sep 20134 Oct 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)0255-5476

Conference

Conference15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period29/09/134/10/13

Keywords

  • Clamped inductive switching
  • Schottky barrier diodes
  • Silicon carbide
  • Switching energy
  • Temperature dependence

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