Temperature and diDS/dt dependence of the switching energy of SiC Schottky diodes in clamped inductive switching applications

Saeed Jahdi; Olayiwola Alatise; Phil A. Mawby

doi:10.4028/www.scientific.net/MSF.778-780.816

Temperature and di_DS/dt dependence of the switching energy of SiC Schottky diodes in clamped inductive switching applications

Saeed Jahdi^*
, Olayiwola Alatise
, Phil A. Mawby

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

This paper presents the temperature and switching rate dependence of 1.2 kV/30 A SiC Schottky diode energy losses in clamped inductive switching circuits with 1.2 kV/30 A SiC MOSFETs as the switching transistors. The devices are tested under an ambient temperature range that spans from -75°C to 175°C and with switching rates that span from 10 to 100 A/μs. Due to the abruptness of the diode turn-OFF, low series resistance and the lack of reverse recovery, SiC SBDs are known to exhibit ringing or electromagnetic oscillations in the presence of parasitic inductances and high switching rates [1]. The impact of these electromagnetic oscillations on the switching energy, the dependence of the switching energy on temperature and the switching rate (di_DS/dt) is the purpose of this paper's investigation.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2013
Publisher	Trans Tech Publications Inc
Pages	816-819
Number of pages	4
ISBN (Print)	9783038350101
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.778-780.816
Publication status	Published - 1 Jan 2014
Event	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan Duration: 29 Sept 2013 → 4 Oct 2013

Publication series

Name	Materials Science Forum
Volume	778-780
ISSN (Print)	0255-5476

Conference

Conference	15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Country/Territory	Japan
City	Miyazaki
Period	29/09/13 → 4/10/13

Keywords

Clamped inductive switching
Schottky barrier diodes
Silicon carbide
Switching energy
Temperature dependence

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10.4028/www.scientific.net/MSF.778-780.816

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Cite this

@inproceedings{04d31e0ff4724f98b1d90e2447c3ebfe,

title = "Temperature and diDS/dt dependence of the switching energy of SiC Schottky diodes in clamped inductive switching applications",

abstract = "This paper presents the temperature and switching rate dependence of 1.2 kV/30 A SiC Schottky diode energy losses in clamped inductive switching circuits with 1.2 kV/30 A SiC MOSFETs as the switching transistors. The devices are tested under an ambient temperature range that spans from -75°C to 175°C and with switching rates that span from 10 to 100 A/μs. Due to the abruptness of the diode turn-OFF, low series resistance and the lack of reverse recovery, SiC SBDs are known to exhibit ringing or electromagnetic oscillations in the presence of parasitic inductances and high switching rates [1]. The impact of these electromagnetic oscillations on the switching energy, the dependence of the switching energy on temperature and the switching rate (diDS/dt) is the purpose of this paper's investigation.",

keywords = "Clamped inductive switching, Schottky barrier diodes, Silicon carbide, Switching energy, Temperature dependence",

author = "Saeed Jahdi and Olayiwola Alatise and Mawby, \{Phil A.\}",

year = "2014",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/MSF.778-780.816",

language = "English",

isbn = "9783038350101",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Inc",

pages = "816--819",

booktitle = "Silicon Carbide and Related Materials 2013",

address = "Switzerland",

note = "15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 ; Conference date: 29-09-2013 Through 04-10-2013",

}

Jahdi, S, Alatise, O & Mawby, PA 2014, Temperature and di_DS/dt dependence of the switching energy of SiC Schottky diodes in clamped inductive switching applications. in Silicon Carbide and Related Materials 2013. Materials Science Forum, vol. 778-780, Trans Tech Publications Inc, pp. 816-819, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 29/09/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.816

Temperature and di_DS/dt dependence of the switching energy of SiC Schottky diodes in clamped inductive switching applications. / Jahdi, Saeed; Alatise, Olayiwola; Mawby, Phil A.
Silicon Carbide and Related Materials 2013. Trans Tech Publications Inc, 2014. p. 816-819 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Temperature and diDS/dt dependence of the switching energy of SiC Schottky diodes in clamped inductive switching applications

AU - Jahdi, Saeed

AU - Alatise, Olayiwola

AU - Mawby, Phil A.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This paper presents the temperature and switching rate dependence of 1.2 kV/30 A SiC Schottky diode energy losses in clamped inductive switching circuits with 1.2 kV/30 A SiC MOSFETs as the switching transistors. The devices are tested under an ambient temperature range that spans from -75°C to 175°C and with switching rates that span from 10 to 100 A/μs. Due to the abruptness of the diode turn-OFF, low series resistance and the lack of reverse recovery, SiC SBDs are known to exhibit ringing or electromagnetic oscillations in the presence of parasitic inductances and high switching rates [1]. The impact of these electromagnetic oscillations on the switching energy, the dependence of the switching energy on temperature and the switching rate (diDS/dt) is the purpose of this paper's investigation.

AB - This paper presents the temperature and switching rate dependence of 1.2 kV/30 A SiC Schottky diode energy losses in clamped inductive switching circuits with 1.2 kV/30 A SiC MOSFETs as the switching transistors. The devices are tested under an ambient temperature range that spans from -75°C to 175°C and with switching rates that span from 10 to 100 A/μs. Due to the abruptness of the diode turn-OFF, low series resistance and the lack of reverse recovery, SiC SBDs are known to exhibit ringing or electromagnetic oscillations in the presence of parasitic inductances and high switching rates [1]. The impact of these electromagnetic oscillations on the switching energy, the dependence of the switching energy on temperature and the switching rate (diDS/dt) is the purpose of this paper's investigation.

KW - Clamped inductive switching

KW - Schottky barrier diodes

KW - Silicon carbide

KW - Switching energy

KW - Temperature dependence

UR - https://www.scopus.com/pages/publications/84896100388

U2 - 10.4028/www.scientific.net/MSF.778-780.816

DO - 10.4028/www.scientific.net/MSF.778-780.816

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84896100388

SN - 9783038350101

T3 - Materials Science Forum

SP - 816

EP - 819

BT - Silicon Carbide and Related Materials 2013

PB - Trans Tech Publications Inc

T2 - 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013

Y2 - 29 September 2013 through 4 October 2013

ER -