Temperature-dependent screening and carrier-carrier scattering in heavily doped semiconductors

K.O. Jensen, JM Rorison, A.B. Walker.

Research output: Contribution to journalArticle (Academic Journal)peer-review

6 Citations (Scopus)

Abstract

We present an analysis of the scattering of hot carriers by conduction electrons in heavily doped semiconductors within the random-phase approximation (RPA). Different approximations to the temperature-dependent RPA are considered: (i) the two-pole approximation developed by Rorison and Herbert, (ii) the plasmon-pole approximation, and (iii) the Lindhard dielectric function. We present a range of results for n-doped GaAs for different carrier energies, doping levels, and temperatures, and we examine the ranges of validity of the different approximations. As an extension of our theory we include, within the two-pole approximation, the coupling of optical phonons to the electron system
Translated title of the contributionTemperature-dependent screening and carrier-carrier scattering in heavily doped semiconductors
Original languageEnglish
Pages (from-to)17121 - 17127
Number of pages7
JournalPhysical Review B: Condensed Matter
Volume48
Issue number23
DOIs
Publication statusPublished - Dec 1993

Bibliographical note

Publisher: American Physical Society

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