Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron

Arno Stockman; Michael Uren; Alaleh Tajalli; Matteo Meneghini; Benoit Bakeroot; Peter Moens

doi:10.1109/ESSDERC.2017.8066609

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R_on

Arno Stockman, Michael Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

16 Citations (Scopus)

Abstract

Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.

Original language	English
Title of host publication	2017 47th European Solid-State Device Research Conference, ESSDERC 2017
Publisher	Editions Frontieres
Pages	130-133
Number of pages	4
ISBN (Electronic)	9781509059782
DOIs	https://doi.org/10.1109/ESSDERC.2017.8066609
Publication status	Published - 12 Oct 2017
Event	47th European Solid-State Device Research Conference, ESSDERC 2017 - Leuven, Belgium Duration: 11 Sept 2017 → 14 Sept 2017

Conference

Conference	47th European Solid-State Device Research Conference, ESSDERC 2017
Country/Territory	Belgium
City	Leuven
Period	11/09/17 → 14/09/17

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10.1109/ESSDERC.2017.8066609

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Cite this

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title = "Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron",

abstract = "Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.",

author = "Arno Stockman and Michael Uren and Alaleh Tajalli and Matteo Meneghini and Benoit Bakeroot and Peter Moens",

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Stockman, A, Uren, M, Tajalli, A, Meneghini, M, Bakeroot, B & Moens, P 2017, Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R_on. in 2017 47th European Solid-State Device Research Conference, ESSDERC 2017., 8066609, Editions Frontieres, pp. 130-133, 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, 11/09/17. https://doi.org/10.1109/ESSDERC.2017.8066609

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R_on. / Stockman, Arno; Uren, Michael; Tajalli, Alaleh et al.
2017 47th European Solid-State Device Research Conference, ESSDERC 2017. Editions Frontieres, 2017. p. 130-133 8066609.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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AU - Bakeroot, Benoit

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AB - Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.

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