Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.
|Title of host publication||2017 47th European Solid-State Device Research Conference, ESSDERC 2017|
|Number of pages||4|
|Publication status||Published - 12 Oct 2017|
|Event||47th European Solid-State Device Research Conference, ESSDERC 2017 - Leuven, Belgium|
Duration: 11 Sep 2017 → 14 Sep 2017
|Conference||47th European Solid-State Device Research Conference, ESSDERC 2017|
|Period||11/09/17 → 14/09/17|