Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron

Arno Stockman, Michael Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

8 Citations (Scopus)

Abstract

Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.

Original languageEnglish
Title of host publication2017 47th European Solid-State Device Research Conference, ESSDERC 2017
PublisherEditions Frontieres
Pages130-133
Number of pages4
ISBN (Electronic)9781509059782
DOIs
Publication statusPublished - 12 Oct 2017
Event47th European Solid-State Device Research Conference, ESSDERC 2017 - Leuven, Belgium
Duration: 11 Sep 201714 Sep 2017

Conference

Conference47th European Solid-State Device Research Conference, ESSDERC 2017
CountryBelgium
CityLeuven
Period11/09/1714/09/17

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