Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Xiang Zheng; James W Pomeroy; Gautam Jindal; Martin H H Kuball

doi:10.1109/TED.2024.3367309

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Xiang Zheng^*, James W Pomeroy, Gautam Jindal, Martin H H Kuball

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

2 Citations (Scopus)

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Abstract

The transient thermal response of GaN high-electron-mobility transistors (HEMTs) is studied using transient thermal thermoreflectance (TTR) measurements. The change in the thermal impedance at various ambient temperatures is observed and analyzed using finite-element (FE) simulation and thermal equivalent circuits. A temperature-dependent Cauer model has been implemented for predicting the transient temperature response of the device under test (DUT), applicable to arbitrary power dissipations or ambient temperatures. This work provides a practical way for determining or verifying transient thermal models of GaN-based HEMTs using RC networks.

Original language	English
Pages (from-to)	2367 - 2372
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	4
Early online date	26 Feb 2024
DOIs	https://doi.org/10.1109/TED.2024.3367309
Publication status	Published - 1 Apr 2024

Research Groups and Themes

CDTR

Keywords

Cauer model
GaN
high-electronmobility transistor (HEMT)
Raman thermography
thermal impedance
, thermoreflectance (TTR)

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title = "Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance",

abstract = "The transient thermal response of GaN high-electron-mobility transistors (HEMTs) is studied using transient thermal thermoreflectance (TTR) measurements. The change in the thermal impedance at various ambient temperatures is observed and analyzed using finite-element (FE) simulation and thermal equivalent circuits. A temperature-dependent Cauer model has been implemented for predicting the transient temperature response of the device under test (DUT), applicable to arbitrary power dissipations or ambient temperatures. This work provides a practical way for determining or verifying transient thermal models of GaN-based HEMTs using RC networks.",

keywords = "Cauer model, GaN, high-electronmobility transistor (HEMT), Raman thermography, thermal impedance, , thermoreflectance (TTR)",

author = "Xiang Zheng and Pomeroy, {James W} and Gautam Jindal and Kuball, {Martin H H}",

year = "2024",

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doi = "10.1109/TED.2024.3367309",

language = "English",

volume = "71",

pages = " 2367 -- 2372",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

AU - Zheng, Xiang

AU - Pomeroy, James W

AU - Jindal, Gautam

AU - Kuball, Martin H H

PY - 2024/4/1

Y1 - 2024/4/1

N2 - The transient thermal response of GaN high-electron-mobility transistors (HEMTs) is studied using transient thermal thermoreflectance (TTR) measurements. The change in the thermal impedance at various ambient temperatures is observed and analyzed using finite-element (FE) simulation and thermal equivalent circuits. A temperature-dependent Cauer model has been implemented for predicting the transient temperature response of the device under test (DUT), applicable to arbitrary power dissipations or ambient temperatures. This work provides a practical way for determining or verifying transient thermal models of GaN-based HEMTs using RC networks.

AB - The transient thermal response of GaN high-electron-mobility transistors (HEMTs) is studied using transient thermal thermoreflectance (TTR) measurements. The change in the thermal impedance at various ambient temperatures is observed and analyzed using finite-element (FE) simulation and thermal equivalent circuits. A temperature-dependent Cauer model has been implemented for predicting the transient temperature response of the device under test (DUT), applicable to arbitrary power dissipations or ambient temperatures. This work provides a practical way for determining or verifying transient thermal models of GaN-based HEMTs using RC networks.

KW - Cauer model

KW - GaN

KW - high-electronmobility transistor (HEMT)

KW - Raman thermography

KW - thermal impedance

KW - , thermoreflectance (TTR)

U2 - 10.1109/TED.2024.3367309

DO - 10.1109/TED.2024.3367309

M3 - Article (Academic Journal)

SN - 0018-9383

VL - 71

SP - 2367

EP - 2372

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

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