Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Huarui Sun, James Pomeroy, Roland Baranyai, Daniel Francis, Firooz Faili, Daniel J. Twitchen, Martin Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

30 Citations (Scopus)
295 Downloads (Pure)


The thermal properties of GaN-on-diamond high electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to
the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide
valuable information for assessing the thermal resistance and reliability of devices.
Original languageEnglish
Pages (from-to)621-624
Number of pages4
JournalIEEE Electron Device Letters
Issue number5
Early online date9 Mar 2016
Publication statusPublished - 22 Apr 2016

Structured keywords

  • CDTR


  • GaN-on-diamond
  • HEMT
  • reliability
  • thermal resistance
  • temperature dependence


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