Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Huarui Sun; James Pomeroy; Roland Baranyai; Daniel Francis; Firooz Faili; Daniel J. Twitchen; Martin Kuball

doi:10.1109/LED.2016.2537835

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Huarui Sun
, James Pomeroy
, Roland Baranyai
, Daniel Francis
, Firooz Faili
, Daniel J. Twitchen
, Martin Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

72 Citations (Scopus)

720 Downloads (Pure)

Abstract

The thermal properties of GaN-on-diamond high electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to
the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide
valuable information for assessing the thermal resistance and reliability of devices.

Original language	English
Pages (from-to)	621-624
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	5
Early online date	9 Mar 2016
DOIs	https://doi.org/10.1109/LED.2016.2537835
Publication status	Published - 22 Apr 2016

Research Groups and Themes

CDTR

Keywords

GaN-on-diamond
HEMT
reliability
thermal resistance
temperature dependence

Access to Document

10.1109/LED.2016.2537835

Full-text PDF (accepted author manuscript)
This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7429696/?arnumber=7429696. Please refer to any applicable terms of use of the publisher.
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Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
Kuball, M. H. H. (Principal Investigator)
8/07/13 → 8/10/16
Project: Research

Cite this

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title = "Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers",

abstract = "The thermal properties of GaN-on-diamond high electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.",

keywords = "GaN-on-diamond, HEMT, reliability, thermal resistance, temperature dependence",

author = "Huarui Sun and James Pomeroy and Roland Baranyai and Daniel Francis and Firooz Faili and Twitchen, \{Daniel J.\} and Martin Kuball",

year = "2016",

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doi = "10.1109/LED.2016.2537835",

language = "English",

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journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

AU - Sun, Huarui

AU - Pomeroy, James

AU - Baranyai, Roland

AU - Francis, Daniel

AU - Faili, Firooz

AU - Twitchen, Daniel J.

AU - Kuball, Martin

PY - 2016/4/22

Y1 - 2016/4/22

N2 - The thermal properties of GaN-on-diamond high electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.

AB - The thermal properties of GaN-on-diamond high electron mobility transistor (HEMT) wafers from 25 °C to 250 °C are reported. The effective thermal boundary resistance between GaN and diamond decreases at elevated temperatures due to the increasing thermal conductivity of the amorphous SiNx interlayer, therefore potentially counteracting thermal runaway of devices. The results demonstrate the thermal benefit of GaN-on-diamond for HEMT high-power operations, and provide valuable information for assessing the thermal resistance and reliability of devices.

KW - GaN-on-diamond

KW - HEMT

KW - reliability

KW - thermal resistance

KW - temperature dependence

U2 - 10.1109/LED.2016.2537835

DO - 10.1109/LED.2016.2537835

M3 - Article (Academic Journal)

SN - 0741-3106

VL - 37

SP - 621

EP - 624

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Abstract

Research Groups and Themes

Keywords

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Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation

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