The 2018 GaN power electronics roadmap

H. Amano, Y. Baines, E. Beam, Matteo Borga, T. Bouchet, Paul R. Chalker, M. Charles, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L. Di Cioccio, Bernd Eckardt, Takashi Egawa, Joseph J. Freedsman, L. Guido, Oliver Häberlen, Geoff Haynes, Thomas HeckelDilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng Jiang, H. Kawai, Dan Kinzer, Martin Kuball, Ashwani Kumar, Kean Boon Lee, Xu Li, Denis Marcon, Martin März, R. McCarthy, Gaudenzio Meneghesso, Matteo Meneghini, E. Morvan, A. Nakajima, E. M.S. Narayanan, Stephen Oliver, Tomás Palacios, Daniel Piedra, M. Plissonnier, R. Reddy, Min Sun, Iain Thayne, A. Torres, Nicola Trivellin, V. Unni, Michael J. Uren, Marleen Van Hove, David J. Wallis, J. Xie, S. Yagi, Shu Yang, C. Youtsey, Ruiyang Yu, Enrico Zanoni, Stefan Zeltner, Yuhao Zhang

Research output: Contribution to journalReview article (Academic Journal)

292 Citations (Scopus)
609 Downloads (Pure)

Abstract

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

Original languageEnglish
Article number163001
Number of pages49
JournalJournal of Physics D: Applied Physics
Volume51
Issue number16
DOIs
Publication statusPublished - 26 Mar 2018

Structured keywords

  • CDTR

Keywords

  • GaN
  • GaN-on-Si
  • power circuits

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