The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation

Yisi Liu; Saeed Jahdi; Mana Hosseinzadehlish; Ian Laird; Phil Mellor; Konstantinos Floros; Ingo Lüdtke

doi:10.4028/p-Y4W1rg

The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation

Yisi Liu
, Saeed Jahdi^*
, Mana Hosseinzadehlish
, Ian Laird
, Phil Mellor
, Konstantinos Floros
, Ingo Lüdtke

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

In this paper, the performance in 3rd quadrant operation of 3rd and 4th generation SiC power MOSFETs have been evaluated. These are the Gen-3 1.2 kV & 18 A Planar SiC MOSFET, Gen-3 1.2 kV & 19 A Asymmetrical Trench SiC MOSFET, Gen-4 1.2 kV & 26 A Symmetrical Double-Trench SiC MOSFET and Gen-4 1.2 kV & 19 A Trench-Assisted Planar SiC MOSFET. Further, the transients of early-stage degradation development are investigated by conducting continuous stress current thorough body diode of the aforementioned devices to explore the extent of degradation in the body diodes of SiC MOSFETs. These devices are compared to provide a better understanding of the impact of different structures.

Original language	English
Pages (from-to)	29-36
Number of pages	8
Journal	Key Engineering Materials
Volume	1022
DOIs	https://doi.org/10.4028/p-Y4W1rg
Publication status	Published - 8 Sept 2025

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© 2025, Trans Tech Publications Ltd. All rights reserved.

Research Groups and Themes

Electrical Energy Management

Keywords

Power Eelctronics
Power Semiconductor Devices

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title = "The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge \& Bipolar Degradation",

abstract = "In this paper, the performance in 3rd quadrant operation of 3rd and 4th generation SiC power MOSFETs have been evaluated. These are the Gen-3 1.2 kV \& 18 A Planar SiC MOSFET, Gen-3 1.2 kV \& 19 A Asymmetrical Trench SiC MOSFET, Gen-4 1.2 kV \& 26 A Symmetrical Double-Trench SiC MOSFET and Gen-4 1.2 kV \& 19 A Trench-Assisted Planar SiC MOSFET. Further, the transients of early-stage degradation development are investigated by conducting continuous stress current thorough body diode of the aforementioned devices to explore the extent of degradation in the body diodes of SiC MOSFETs. These devices are compared to provide a better understanding of the impact of different structures.",

keywords = "Power Eelctronics, Power Semiconductor Devices",

author = "Yisi Liu and Saeed Jahdi and Mana Hosseinzadehlish and Ian Laird and Phil Mellor and Konstantinos Floros and Ingo L{\"u}dtke",

year = "2025",

month = sep,

day = "8",

doi = "10.4028/p-Y4W1rg",

language = "English",

volume = "1022",

pages = "29--36",

journal = "Key Engineering Materials",

issn = "1013-9826",

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T2 - Recovery Charge & Bipolar Degradation

AU - Liu, Yisi

AU - Jahdi, Saeed

AU - Hosseinzadehlish, Mana

AU - Laird, Ian

AU - Mellor, Phil

AU - Floros, Konstantinos

AU - Lüdtke, Ingo

PY - 2025/9/8

Y1 - 2025/9/8

N2 - In this paper, the performance in 3rd quadrant operation of 3rd and 4th generation SiC power MOSFETs have been evaluated. These are the Gen-3 1.2 kV & 18 A Planar SiC MOSFET, Gen-3 1.2 kV & 19 A Asymmetrical Trench SiC MOSFET, Gen-4 1.2 kV & 26 A Symmetrical Double-Trench SiC MOSFET and Gen-4 1.2 kV & 19 A Trench-Assisted Planar SiC MOSFET. Further, the transients of early-stage degradation development are investigated by conducting continuous stress current thorough body diode of the aforementioned devices to explore the extent of degradation in the body diodes of SiC MOSFETs. These devices are compared to provide a better understanding of the impact of different structures.

AB - In this paper, the performance in 3rd quadrant operation of 3rd and 4th generation SiC power MOSFETs have been evaluated. These are the Gen-3 1.2 kV & 18 A Planar SiC MOSFET, Gen-3 1.2 kV & 19 A Asymmetrical Trench SiC MOSFET, Gen-4 1.2 kV & 26 A Symmetrical Double-Trench SiC MOSFET and Gen-4 1.2 kV & 19 A Trench-Assisted Planar SiC MOSFET. Further, the transients of early-stage degradation development are investigated by conducting continuous stress current thorough body diode of the aforementioned devices to explore the extent of degradation in the body diodes of SiC MOSFETs. These devices are compared to provide a better understanding of the impact of different structures.

KW - Power Eelctronics

KW - Power Semiconductor Devices

U2 - 10.4028/p-Y4W1rg

DO - 10.4028/p-Y4W1rg

M3 - Article (Academic Journal)

SN - 1013-9826

VL - 1022

SP - 29

EP - 36

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

The 3rd Quadrant Operation of 4th Generation SiC MOSFETs: Recovery Charge & Bipolar Degradation

Abstract

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