The constraints on quantum-dot semiconductor optical amplifiers for multichannel amplification

HC Wong; GB Ren; JM Rorison

doi:10.1109/LPT.2006.881667

The constraints on quantum-dot semiconductor optical amplifiers for multichannel amplification

HC Wong, GB Ren, JM Rorison

Research output: Contribution to journal › Article (Academic Journal) › peer-review

19 Citations (Scopus)

Abstract

We report our theoretical studies on the application of InGaAs-GaAs quantum-dot (QD) semiconductor optical amplifier as a single-device multichannel amplifier in the coarse wavelength-division-multiplexing network. Our numerical model exploits the broadened excited states in the QDs to enhance the broadband property of the inhomogeneous QD material

Translated title of the contribution	The constraints on quantum-dot semiconductor optical amplifiers for multichannel amplification
Original language	English
Pages (from-to)	2075 - 2077
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18 (20)
DOIs	https://doi.org/10.1109/LPT.2006.881667
Publication status	Published - Oct 2006

Bibliographical note

Publisher: IEEE

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title = "The constraints on quantum-dot semiconductor optical amplifiers for multichannel amplification",

abstract = "We report our theoretical studies on the application of InGaAs-GaAs quantum-dot (QD) semiconductor optical amplifier as a single-device multichannel amplifier in the coarse wavelength-division-multiplexing network. Our numerical model exploits the broadened excited states in the QDs to enhance the broadband property of the inhomogeneous QD material",

author = "HC Wong and GB Ren and JM Rorison",

note = "Publisher: IEEE",

year = "2006",

month = oct,

doi = "10.1109/LPT.2006.881667",

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AU - Ren, GB

AU - Rorison, JM

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Y1 - 2006/10

N2 - We report our theoretical studies on the application of InGaAs-GaAs quantum-dot (QD) semiconductor optical amplifier as a single-device multichannel amplifier in the coarse wavelength-division-multiplexing network. Our numerical model exploits the broadened excited states in the QDs to enhance the broadband property of the inhomogeneous QD material

AB - We report our theoretical studies on the application of InGaAs-GaAs quantum-dot (QD) semiconductor optical amplifier as a single-device multichannel amplifier in the coarse wavelength-division-multiplexing network. Our numerical model exploits the broadened excited states in the QDs to enhance the broadband property of the inhomogeneous QD material

U2 - 10.1109/LPT.2006.881667

DO - 10.1109/LPT.2006.881667

M3 - Article (Academic Journal)

VL - 18 (20)

SP - 2075

EP - 2077

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

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