The effect of baseband impedance termination on the linearity of GaN HEMTs

M Akmal; J Lees; S Ben Smida; S Woodington; V Carrubba; S Cripps; J Benedikt; KA Morris; MA Beach; JP McGeehan; P Tasker

The effect of baseband impedance termination on the linearity of GaN HEMTs

M Akmal, J Lees, S Ben Smida, S Woodington, V Carrubba, S Cripps, J Benedikt, KA Morris, MA Beach, JP McGeehan, P Tasker

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

33 Citations (Scopus)

777 Downloads (Pure)

Abstract

This paper demonstrates the significant effect of baseband impedance termination on the linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm. The paper also proposes a further refinement to a state-of-art active IF load-pull measurement system to allow the precise independent control of all significant baseband components generated as a result of the multi-tone excitation used. The presentation of specific baseband impedances has delivered a 20dBc and 17dBc improvement in IM3 and IM5 inter-modulation products respectively, relative to the case of a classical, ideal short circuit. As expected for this device, this was achieved by emulating appropriate negative impedances lying outside of the Smith chart, and when this observation is considered alongside the Envelope Tracking PA architecture, this raises the interesting possibility of significantly improving PA linearity using the very mechanisms that are employed to improve PA efficiency.

Translated title of the contribution	The effect of baseband impedance termination on the linearity of GaN HEMTs
Original language	English
Title of host publication	European Microwave Conference 2010 (EuMC), Paris, France
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1046 - 1049
Number of pages	4
ISBN (Print)	9781424472321
Publication status	Published - Sep 2010
Event	40th European Microwave Conference (EuMC) - Paris, France Duration: 1 Sep 2010 → …

Conference

Conference	40th European Microwave Conference (EuMC)
Country	France
City	Paris
Period	1/09/10 → …

Bibliographical note

Rose publication type: Conference contribution

Sponsorship: This work has been carried out as part of EPSRC grant EP/F033702/1. The authors would also like to thank CREE for supporting this activity and supplying the devices

Terms of use: Copyright © 2010 IEEE. Reprinted from 2010 European Microwave Conference (EuMC).

This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.

By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Keywords

GaN HEMTs

Access to Document

Conference paperAccepted author manuscript, 687 KB
Accompanying conference posterAccepted author manuscript, 1.04 MB

http://hdl.handle.net/1983/1694

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Cite this

Akmal, M., Lees, J., Ben Smida, S., Woodington, S., Carrubba, V., Cripps, S., Benedikt, J., Morris, KA., Beach, MA., McGeehan, JP., & Tasker, P. (2010). The effect of baseband impedance termination on the linearity of GaN HEMTs. In European Microwave Conference 2010 (EuMC), Paris, France (pp. 1046 - 1049). Institute of Electrical and Electronics Engineers (IEEE). http://hdl.handle.net/1983/1694

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abstract = "This paper demonstrates the significant effect of baseband impedance termination on the linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm. The paper also proposes a further refinement to a state-of-art active IF load-pull measurement system to allow the precise independent control of all significant baseband components generated as a result of the multi-tone excitation used. The presentation of specific baseband impedances has delivered a 20dBc and 17dBc improvement in IM3 and IM5 inter-modulation products respectively, relative to the case of a classical, ideal short circuit. As expected for this device, this was achieved by emulating appropriate negative impedances lying outside of the Smith chart, and when this observation is considered alongside the Envelope Tracking PA architecture, this raises the interesting possibility of significantly improving PA linearity using the very mechanisms that are employed to improve PA efficiency.",

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author = "M Akmal and J Lees and {Ben Smida}, S and S Woodington and V Carrubba and S Cripps and J Benedikt and KA Morris and MA Beach and JP McGeehan and P Tasker",

note = "Rose publication type: Conference contribution Sponsorship: This work has been carried out as part of EPSRC grant EP/F033702/1. The authors would also like to thank CREE for supporting this activity and supplying the devices Terms of use: Copyright {\textcopyright} 2010 IEEE. Reprinted from 2010 European Microwave Conference (EuMC). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. ; 40th European Microwave Conference (EuMC) ; Conference date: 01-09-2010",

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Akmal, M, Lees, J, Ben Smida, S, Woodington, S, Carrubba, V, Cripps, S, Benedikt, J, Morris, KA , Beach, MA, McGeehan, JP & Tasker, P 2010, The effect of baseband impedance termination on the linearity of GaN HEMTs. in European Microwave Conference 2010 (EuMC), Paris, France. Institute of Electrical and Electronics Engineers (IEEE), pp. 1046 - 1049, 40th European Microwave Conference (EuMC), Paris, France, 1/09/10. <http://hdl.handle.net/1983/1694>

The effect of baseband impedance termination on the linearity of GaN HEMTs. / Akmal, M; Lees, J; Ben Smida, S; Woodington, S; Carrubba, V; Cripps, S; Benedikt, J; Morris, KA ; Beach, MA; McGeehan, JP; Tasker, P.

European Microwave Conference 2010 (EuMC), Paris, France. Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 1046 - 1049.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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AU - Akmal, M

AU - Lees, J

AU - Ben Smida, S

AU - Woodington, S

AU - Carrubba, V

AU - Cripps, S

AU - Benedikt, J

AU - Morris, KA

AU - Beach, MA

AU - McGeehan, JP

AU - Tasker, P

N1 - Rose publication type: Conference contribution Sponsorship: This work has been carried out as part of EPSRC grant EP/F033702/1. The authors would also like to thank CREE for supporting this activity and supplying the devices Terms of use: Copyright © 2010 IEEE. Reprinted from 2010 European Microwave Conference (EuMC). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

PY - 2010/9

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N2 - This paper demonstrates the significant effect of baseband impedance termination on the linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm. The paper also proposes a further refinement to a state-of-art active IF load-pull measurement system to allow the precise independent control of all significant baseband components generated as a result of the multi-tone excitation used. The presentation of specific baseband impedances has delivered a 20dBc and 17dBc improvement in IM3 and IM5 inter-modulation products respectively, relative to the case of a classical, ideal short circuit. As expected for this device, this was achieved by emulating appropriate negative impedances lying outside of the Smith chart, and when this observation is considered alongside the Envelope Tracking PA architecture, this raises the interesting possibility of significantly improving PA linearity using the very mechanisms that are employed to improve PA efficiency.

AB - This paper demonstrates the significant effect of baseband impedance termination on the linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm. The paper also proposes a further refinement to a state-of-art active IF load-pull measurement system to allow the precise independent control of all significant baseband components generated as a result of the multi-tone excitation used. The presentation of specific baseband impedances has delivered a 20dBc and 17dBc improvement in IM3 and IM5 inter-modulation products respectively, relative to the case of a classical, ideal short circuit. As expected for this device, this was achieved by emulating appropriate negative impedances lying outside of the Smith chart, and when this observation is considered alongside the Envelope Tracking PA architecture, this raises the interesting possibility of significantly improving PA linearity using the very mechanisms that are employed to improve PA efficiency.

KW - GaN HEMTs

M3 - Conference Contribution (Conference Proceeding)

SN - 9781424472321

SP - 1046

EP - 1049

BT - European Microwave Conference 2010 (EuMC), Paris, France

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 40th European Microwave Conference (EuMC)

Y2 - 1 September 2010

ER -