The effect of baseband impedance termination on the linearity of GaN HEMTs

M Akmal, J Lees, S Ben Smida, S Woodington, V Carrubba, S Cripps, J Benedikt, KA Morris, MA Beach, JP McGeehan, P Tasker

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

33 Citations (Scopus)
777 Downloads (Pure)

Abstract

This paper demonstrates the significant effect of baseband impedance termination on the linearity performance of a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm. The paper also proposes a further refinement to a state-of-art active IF load-pull measurement system to allow the precise independent control of all significant baseband components generated as a result of the multi-tone excitation used. The presentation of specific baseband impedances has delivered a 20dBc and 17dBc improvement in IM3 and IM5 inter-modulation products respectively, relative to the case of a classical, ideal short circuit. As expected for this device, this was achieved by emulating appropriate negative impedances lying outside of the Smith chart, and when this observation is considered alongside the Envelope Tracking PA architecture, this raises the interesting possibility of significantly improving PA linearity using the very mechanisms that are employed to improve PA efficiency.
Translated title of the contributionThe effect of baseband impedance termination on the linearity of GaN HEMTs
Original languageEnglish
Title of host publicationEuropean Microwave Conference 2010 (EuMC), Paris, France
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1046 - 1049
Number of pages4
ISBN (Print)9781424472321
Publication statusPublished - Sep 2010
Event40th European Microwave Conference (EuMC) - Paris, France
Duration: 1 Sep 2010 → …

Conference

Conference40th European Microwave Conference (EuMC)
CountryFrance
CityParis
Period1/09/10 → …

Bibliographical note

Rose publication type: Conference contribution

Sponsorship: This work has been carried out as part of EPSRC grant EP/F033702/1. The authors would also like to thank CREE for supporting this activity and supplying the devices

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Keywords

  • GaN HEMTs

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