Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.
|Translated title of the contribution||The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure|
|Title of host publication||Materials Research Society Fall Meeting, Boston, 2002|
|Publisher||Materials Research Society|
|Number of pages||6|
|Publication status||Published - 2002|
Bibliographical noteConference Proceedings/Title of Journal: MRS Proceedings Symposium L
Conference Organiser: Materials Research Society
Baines, MQ., Cherns, D., Hsu, JWP., & Manfra, MJ. (2002). The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure. In Materials Research Society Fall Meeting, Boston, 2002 (Vol. 743, pp. L2.5). Materials Research Society.