The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure

MQ Baines, D Cherns, JWP Hsu, MJ Manfra

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.
Translated title of the contributionThe Effect of Growth Stoichiometry on the GaN Dislocation Core Structure
Original languageEnglish
Title of host publicationMaterials Research Society Fall Meeting, Boston, 2002
PublisherMaterials Research Society
PagesL2.5
Number of pages6
Volume743
Publication statusPublished - 2002

Bibliographical note

Conference Proceedings/Title of Journal: MRS Proceedings Symposium L
Conference Organiser: Materials Research Society

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    Baines, MQ., Cherns, D., Hsu, JWP., & Manfra, MJ. (2002). The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure. In Materials Research Society Fall Meeting, Boston, 2002 (Vol. 743, pp. L2.5). Materials Research Society.