The effect of growth stoichiometry on the GaN dislocation core structure

MQ Baines, D Cherns, JWP Hsu, MJ Manfra

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution Studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.
Translated title of the contributionThe effect of growth stoichiometry on the GaN dislocation core structure
Original languageEnglish
Pages (from-to)41 - 46
JournalMaterial Research Society Symposium Proceedings
Volume743
Issue numberSymposium L – GaN and Related Alloys
Publication statusPublished - 2003

Bibliographical note

Editors: Wetzel C, Yu ET, Speck JS, Arakawa Y
ISBN: 155899680X
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys, 2002 MRS Fall Meeting, Boston
Conference Organiser: Materials Research Society

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