The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure

MQ Baines; D Cherns; JWP Hsu; MJ Manfra

The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure

MQ Baines
, D Cherns
, JWP Hsu
, MJ Manfra

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.

Translated title of the contribution	The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure
Original language	English
Title of host publication	Materials Research Society Fall Meeting, Boston, 2002
Publisher	Materials Research Society
Pages	L2.5
Number of pages	6
Volume	743
Publication status	Published - 2002

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Conference Proceedings/Title of Journal: MRS Proceedings Symposium L
Conference Organiser: Materials Research Society

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title = "The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure",

abstract = "Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.",

author = "MQ Baines and D Cherns and JWP Hsu and MJ Manfra",

note = "Conference Proceedings/Title of Journal: MRS Proceedings Symposium L Conference Organiser: Materials Research Society",

year = "2002",

language = "English",

volume = "743",

pages = "L2.5",

booktitle = "Materials Research Society Fall Meeting, Boston, 2002",

publisher = "Materials Research Society",

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TY - GEN

T1 - The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure

AU - Baines, MQ

AU - Cherns, D

AU - Hsu, JWP

AU - Manfra, MJ

N1 - Conference Proceedings/Title of Journal: MRS Proceedings Symposium L Conference Organiser: Materials Research Society

PY - 2002

Y1 - 2002

N2 - Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.

AB - Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.

M3 - Conference Contribution (Conference Proceeding)

VL - 743

SP - L2.5

BT - Materials Research Society Fall Meeting, Boston, 2002

PB - Materials Research Society

ER -

The Effect of Growth Stoichiometry on the GaN Dislocation Core Structure

Abstract

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