The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman; A. Tajalli; M. Meneghini; M. J. Uren; S. Mouhoubi; S. Gerardin; M. Bagatin; A. Paccagnella; G. Meneghesso; E. Zanoni; P. Moens; B. Bakeroot

doi:10.1109/TED.2018.2881325

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman^*, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

5 Citations (Scopus)

Abstract

Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 10¹³ cm^-2, the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.

Original language	English
Article number	8556004
Pages (from-to)	372-377
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
Early online date	3 Dec 2018
DOIs	https://doi.org/10.1109/TED.2018.2881325
Publication status	Published - 1 Jan 2019

Keywords

dynamic ON-resistance
Gallium nitride (GaN)
high-electron-mobility transistor (HEMT)
proton irradiation

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10.1109/TED.2018.2881325

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Stockman, A., Tajalli, A., Meneghini, M., Uren, M. J., Mouhoubi, S., Gerardin, S., Bagatin, M., Paccagnella, A., Meneghesso, G., Zanoni, E., Moens, P., & Bakeroot, B. (2019). The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices, 66(1), 372-377. [8556004]. https://doi.org/10.1109/TED.2018.2881325

Stockman, A. ; Tajalli, A. ; Meneghini, M. ; Uren, M. J. ; Mouhoubi, S. ; Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Meneghesso, G. ; Zanoni, E. ; Moens, P. ; Bakeroot, B. / The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. In: IEEE Transactions on Electron Devices. 2019 ; Vol. 66, No. 1. pp. 372-377.

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title = "The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors",

abstract = "Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm-2, the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.",

keywords = "dynamic ON-resistance, Gallium nitride (GaN), high-electron-mobility transistor (HEMT), proton irradiation",

author = "A. Stockman and A. Tajalli and M. Meneghini and Uren, {M. J.} and S. Mouhoubi and S. Gerardin and M. Bagatin and A. Paccagnella and G. Meneghesso and E. Zanoni and P. Moens and B. Bakeroot",

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Stockman, A, Tajalli, A, Meneghini, M, Uren, MJ, Mouhoubi, S, Gerardin, S, Bagatin, M, Paccagnella, A, Meneghesso, G, Zanoni, E, Moens, P & Bakeroot, B 2019, 'The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors', IEEE Transactions on Electron Devices, vol. 66, no. 1, 8556004, pp. 372-377. https://doi.org/10.1109/TED.2018.2881325

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. / Stockman, A.; Tajalli, A.; Meneghini, M.; Uren, M. J.; Mouhoubi, S.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Meneghesso, G.; Zanoni, E.; Moens, P.; Bakeroot, B.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 1, 8556004, 01.01.2019, p. 372-377.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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AU - Stockman, A.

AU - Tajalli, A.

AU - Meneghini, M.

AU - Uren, M. J.

AU - Mouhoubi, S.

AU - Gerardin, S.

AU - Bagatin, M.

AU - Paccagnella, A.

AU - Meneghesso, G.

AU - Zanoni, E.

AU - Moens, P.

AU - Bakeroot, B.

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N2 - Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm-2, the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.

AB - Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm-2, the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.

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