The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

A. Stockman*, A. Tajalli, M. Meneghini, M. J. Uren, S. Mouhoubi, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni, P. Moens, B. Bakeroot

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

5 Citations (Scopus)

Abstract

Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm-2, the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.

Original languageEnglish
Article number8556004
Pages (from-to)372-377
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number1
Early online date3 Dec 2018
DOIs
Publication statusPublished - 1 Jan 2019

Keywords

  • dynamic ON-resistance
  • Gallium nitride (GaN)
  • high-electron-mobility transistor (HEMT)
  • proton irradiation

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