The evolution of transverse modes in GaInNAsVCSELs

[No Value] Othman, K Tastavridis, JCL Yong, JM Rorison, RV Penty, IH White

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

In this work a circularly symmetric structure is assumed. The field, thermal, standard carrier diffusion and photon rate equations are solved accordingly. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, but at this initial stage of the work, gain-guided device whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with DBR stacks.
Translated title of the contributionThe evolution of transverse modes in GaInNAsVCSELs
Original languageEnglish
Title of host publication15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2002 (LEOS 2002), Glasgow, UK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages273 - 274
Number of pages2
DOIs
Publication statusPublished - 10 Nov 2002

Fingerprint Dive into the research topics of 'The evolution of transverse modes in GaInNAsVCSELs'. Together they form a unique fingerprint.

Cite this