In this work a circularly symmetric structure is assumed. The field, thermal, standard carrier diffusion and photon rate equations are solved accordingly. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, but at this initial stage of the work, gain-guided device whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with DBR stacks.
|Translated title of the contribution||The evolution of transverse modes in GaInNAsVCSELs|
|Title of host publication||15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2002 (LEOS 2002), Glasgow, UK|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Pages||273 - 274|
|Number of pages||2|
|Publication status||Published - 10 Nov 2002|