The evolution of transverse modes in GaInNAsVCSELs

[No Value] Othman; K Tastavridis; JCL Yong; JM Rorison; RV Penty; IH White

doi:10.1109/LEOS.2002.1134033

The evolution of transverse modes in GaInNAsVCSELs

[No Value] Othman, K Tastavridis, JCL Yong, JM Rorison, RV Penty, IH White

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

In this work a circularly symmetric structure is assumed. The field, thermal, standard carrier diffusion and photon rate equations are solved accordingly. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, but at this initial stage of the work, gain-guided device whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with DBR stacks.

Translated title of the contribution	The evolution of transverse modes in GaInNAsVCSELs
Original language	English
Title of host publication	15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2002 (LEOS 2002), Glasgow, UK
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	273 - 274
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2002.1134033
Publication status	Published - 10 Nov 2002

Research Groups and Themes

Photonics and Quantum

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10.1109/LEOS.2002.1134033

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title = "The evolution of transverse modes in GaInNAsVCSELs",

abstract = "In this work a circularly symmetric structure is assumed. The field, thermal, standard carrier diffusion and photon rate equations are solved accordingly. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, but at this initial stage of the work, gain-guided device whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with DBR stacks.",

author = "Othman, {[No Value]} and K Tastavridis and JCL Yong and JM Rorison and RV Penty and IH White",

year = "2002",

month = nov,

day = "10",

doi = "10.1109/LEOS.2002.1134033",

language = "English",

pages = "273 -- 274",

booktitle = "15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2002 (LEOS 2002), Glasgow, UK",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

The evolution of transverse modes in GaInNAsVCSELs. / Othman, [No Value]; Tastavridis, K; Yong, JCL et al.
15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2002 (LEOS 2002), Glasgow, UK. Institute of Electrical and Electronics Engineers (IEEE), 2002. p. 273 - 274.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - The evolution of transverse modes in GaInNAsVCSELs

AU - Othman, [No Value]

AU - Tastavridis, K

AU - Yong, JCL

AU - Rorison, JM

AU - Penty, RV

AU - White, IH

PY - 2002/11/10

Y1 - 2002/11/10

N2 - In this work a circularly symmetric structure is assumed. The field, thermal, standard carrier diffusion and photon rate equations are solved accordingly. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, but at this initial stage of the work, gain-guided device whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with DBR stacks.

AB - In this work a circularly symmetric structure is assumed. The field, thermal, standard carrier diffusion and photon rate equations are solved accordingly. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, but at this initial stage of the work, gain-guided device whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with DBR stacks.

U2 - 10.1109/LEOS.2002.1134033

DO - 10.1109/LEOS.2002.1134033

M3 - Conference Contribution (Conference Proceeding)

SP - 273

EP - 274

BT - 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2002 (LEOS 2002), Glasgow, UK

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

The evolution of transverse modes in GaInNAsVCSELs

Abstract

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