The generation of misfit dislocation if AlGaN/GaN films

C Jiao, D Cherns

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Translated title of the contribution	The generation of misfit dislocation if AlGaN/GaN films
Original language	English
Title of host publication	Int. Conf. on Microscopy of Semiconducting Materials, Oxford, March 2001
Publisher	IOP Publishing
Pages	327 - 332
Number of pages	6
Publication status	Published - 2006

Conference Proceedings/Title of Journal: Inst. Phys. Conf. Ser. 169
Conference Organiser: Institute of Physics

Handle.net

@inproceedings{1577808da0e5427dae74a4169afbceee,

title = "The generation of misfit dislocation if AlGaN/GaN films",

author = "C Jiao and D Cherns",

note = "Conference Proceedings/Title of Journal: Inst. Phys. Conf. Ser. 169 Conference Organiser: Institute of Physics",

year = "2006",

language = "English",

pages = "327 -- 332",

booktitle = "Int. Conf. on Microscopy of Semiconducting Materials, Oxford, March 2001",

publisher = "IOP Publishing",

address = "United Kingdom",

}

TY - GEN

T1 - The generation of misfit dislocation if AlGaN/GaN films

AU - Jiao, C

AU - Cherns, D

N1 - Conference Proceedings/Title of Journal: Inst. Phys. Conf. Ser. 169 Conference Organiser: Institute of Physics

PY - 2006

Y1 - 2006

M3 - Conference Contribution (Conference Proceeding)

SP - 327

EP - 332

BT - Int. Conf. on Microscopy of Semiconducting Materials, Oxford, March 2001

PB - IOP Publishing

ER -