The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films

D Cherns, S Sahonta, R Liu, FA Ponce, H Amano, I Akasaki

Research output: Contribution to journalArticle (Academic Journal)peer-review

13 Citations (Scopus)

Abstract

The relaxation of tensile stresses in AlGaN layers grown on GaN/(0001)sapphire by facet-controlled epitaxial lateral overgrowth is reported. It is shown that a-type misfit dislocations are introduced at inclined {11 (2) over bar2} AlGaN/GaN interfaces, with strong evidence for a half-loop nucleation and glide mechanism driven by shear stresses present on the (0001) slip plane. In addition to relieving misfit stresses, these dislocations introduce grain rotations of up to 10(-2) rad across the AlGaN/GaN boundaries, leading to tilt boundaries at the meeting front between laterally growing wings and between regions growing in the lateral and [0001] directions. The effects of these processes on the defect density in subsequent layers are examined.
Translated title of the contributionThe generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films
Original languageEnglish
Pages (from-to)4923 - 4925
Number of pages3
JournalApplied Physics Letters
Volume85 (21)
DOIs
Publication statusPublished - 22 Nov 2004

Bibliographical note

Publisher: American Institute of Physics

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