The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays

D. Cherns; R. F. Webster; S. V. Novikov; C. T. Foxon; A. M. Fischer; F. A. Ponce

doi:10.1016/j.jcrysgro.2013.09.012

The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays

D. Cherns^*
, R. F. Webster
, S. V. Novikov
, C. T. Foxon
, A. M. Fischer
, F. A. Ponce

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

2 Citations (Scopus)

Abstract

Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod growth, and are subsequently confined to twist grain boundaries 1-2 mu m apart in the overlayer. In the In0.5Ga0.5N growth, the nanorods formed core-shell hexagonal wurtzite structures with In-poor surfaces, with lateral growth leading to grains with cubic zinc blende structure. High spatial resolution cathodoluminescence imaging showed that the In0.5Ga0.5N overlayers luminesced strongly, with evidence of compositional variations on the 1-2 mu m scale. The reasons for compositional variations and the growth of cubic material are discussed. (C) 2013 Elsevier B.V. All rights reserved

Original language	English
Pages (from-to)	55-60
Number of pages	6
Journal	Journal of Crystal Growth
Volume	384
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.09.012
Publication status	Published - 1 Dec 2013

Keywords

Nanostructures
Characterisation
Molecular beam epitaxy
Nitrides
Semiconducting III-V materials
Solar cells

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10.1016/j.jcrysgro.2013.09.012

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Solar cells based on InGaN nanostructures
Cherns, D. (Principal Investigator)
1/10/11 → 1/10/14
Project: Research

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@article{a39d188d453348fba654c4f64db926ce,

title = "The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays",

abstract = "Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod growth, and are subsequently confined to twist grain boundaries 1-2 mu m apart in the overlayer. In the In0.5Ga0.5N growth, the nanorods formed core-shell hexagonal wurtzite structures with In-poor surfaces, with lateral growth leading to grains with cubic zinc blende structure. High spatial resolution cathodoluminescence imaging showed that the In0.5Ga0.5N overlayers luminesced strongly, with evidence of compositional variations on the 1-2 mu m scale. The reasons for compositional variations and the growth of cubic material are discussed. (C) 2013 Elsevier B.V. All rights reserved",

keywords = "Nanostructures, Characterisation, Molecular beam epitaxy, Nitrides, Semiconducting III-V materials, Solar cells",

author = "D. Cherns and Webster, \{R. F.\} and Novikov, \{S. V.\} and Foxon, \{C. T.\} and Fischer, \{A. M.\} and Ponce, \{F. A.\}",

year = "2013",

month = dec,

day = "1",

doi = "10.1016/j.jcrysgro.2013.09.012",

language = "English",

volume = "384",

pages = "55--60",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays

AU - Cherns, D.

AU - Webster, R. F.

AU - Novikov, S. V.

AU - Foxon, C. T.

AU - Fischer, A. M.

AU - Ponce, F. A.

PY - 2013/12/1

Y1 - 2013/12/1

N2 - Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod growth, and are subsequently confined to twist grain boundaries 1-2 mu m apart in the overlayer. In the In0.5Ga0.5N growth, the nanorods formed core-shell hexagonal wurtzite structures with In-poor surfaces, with lateral growth leading to grains with cubic zinc blende structure. High spatial resolution cathodoluminescence imaging showed that the In0.5Ga0.5N overlayers luminesced strongly, with evidence of compositional variations on the 1-2 mu m scale. The reasons for compositional variations and the growth of cubic material are discussed. (C) 2013 Elsevier B.V. All rights reserved

AB - Molecular beam epitaxy has been used to grow continuous overlayers of In0.5Ga0.5N and InN on (1 1 1)Si, via growth of an intermediate nanorod arrays. Transmission electron microscopy showed that few threading dislocations are generated during nanorod growth, and are subsequently confined to twist grain boundaries 1-2 mu m apart in the overlayer. In the In0.5Ga0.5N growth, the nanorods formed core-shell hexagonal wurtzite structures with In-poor surfaces, with lateral growth leading to grains with cubic zinc blende structure. High spatial resolution cathodoluminescence imaging showed that the In0.5Ga0.5N overlayers luminesced strongly, with evidence of compositional variations on the 1-2 mu m scale. The reasons for compositional variations and the growth of cubic material are discussed. (C) 2013 Elsevier B.V. All rights reserved

KW - Nanostructures

KW - Characterisation

KW - Molecular beam epitaxy

KW - Nitrides

KW - Semiconducting III-V materials

KW - Solar cells

U2 - 10.1016/j.jcrysgro.2013.09.012

DO - 10.1016/j.jcrysgro.2013.09.012

M3 - Article (Academic Journal)

SN - 0022-0248

VL - 384

SP - 55

EP - 60

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays

Abstract

Keywords

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Projects

Solar cells based on InGaN nanostructures

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