The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors

M Akmal; J Lees; S Ben Smida; S Woodington; J Benedikt; KA Morris; MA Beach; JP McGeehan; P Tasker

doi:10.1109/INMMIC.2010.5480111

The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors

M Akmal, J Lees, S Ben Smida, S Woodington, J Benedikt, KA Morris, MA Beach, JP McGeehan, P Tasker

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

18 Citations (Scopus)

519 Downloads (Pure)

Abstract

The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.

Translated title of the contribution	The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors
Original language	English
Title of host publication	Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits 2010 (INMMIC) Gothenberg, Sweden
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	148 - 151
Number of pages	4
ISBN (Print)	9781424474103
DOIs	https://doi.org/10.1109/INMMIC.2010.5480111
Publication status	Published - Apr 2010
Event	Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits - Goteborg, Sweden Duration: 1 Apr 2010 → …

Workshop

Workshop	Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits
Country/Territory	Sweden
City	Goteborg
Period	1/04/10 → …

Bibliographical note

Rose publication type: Conference contribution

Sponsorship: This work has been carried out as part of EPSRC grant EP/F033702/1. The authors would also like to thank CREE for supporting this activity and supplying the devices; specifically Ray Pengelly and Mr. Simon Wood.

Terms of use: Copyright © 2010 IEEE. Reprinted from Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010.

This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.

By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Keywords

envelope domain
hysteresis
GaN
IF active load pull
inter-modulation
memory effects

Access to Document

10.1109/INMMIC.2010.5480111

Akmal IEEE INMMIC 2010Accepted author manuscript, 521 KB

http://hdl.handle.net/1983/1671

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Persistent link

HOLISTIC DESIGN OF POWER AMPLIFIERS FOR FUTURE WIRELESS SYSTEMS
Morris, K. A.
18/08/08 → 18/08/13
Project: Research

Cite this

Akmal, M., Lees, J., Ben Smida, S., Woodington, S., Benedikt, J., Morris, KA., Beach, MA., McGeehan, JP., & Tasker, P. (2010). The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors. In Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits 2010 (INMMIC) Gothenberg, Sweden (pp. 148 - 151). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/INMMIC.2010.5480111

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note = "Rose publication type: Conference contribution Sponsorship: This work has been carried out as part of EPSRC grant EP/F033702/1. The authors would also like to thank CREE for supporting this activity and supplying the devices; specifically Ray Pengelly and Mr. Simon Wood. Terms of use: Copyright {\textcopyright} 2010 IEEE. Reprinted from Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. ; Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits ; Conference date: 01-04-2010",

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Akmal, M, Lees, J, Ben Smida, S, Woodington, S, Benedikt, J, Morris, KA, Beach, MA, McGeehan, JP & Tasker, P 2010, The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors. in Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits 2010 (INMMIC) Gothenberg, Sweden. Institute of Electrical and Electronics Engineers (IEEE), pp. 148 - 151, Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, Goteborg, Sweden, 1/04/10. https://doi.org/10.1109/INMMIC.2010.5480111

The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors. / Akmal, M; Lees, J; Ben Smida, S et al.

Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits 2010 (INMMIC) Gothenberg, Sweden. Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 148 - 151.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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N2 - The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.

AB - The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.

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M3 - Conference Contribution (Conference Proceeding)

SN - 9781424474103

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BT - Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits 2010 (INMMIC) Gothenberg, Sweden

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits

Y2 - 1 April 2010

ER -

Akmal M, Lees J, Ben Smida S, Woodington S, Benedikt J, Morris KA et al. The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors. In Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits 2010 (INMMIC) Gothenberg, Sweden. Institute of Electrical and Electronics Engineers (IEEE). 2010. p. 148 - 151 doi: 10.1109/INMMIC.2010.5480111

The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors

Abstract

Workshop

Bibliographical note

Keywords

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Projects

HOLISTIC DESIGN OF POWER AMPLIFIERS FOR FUTURE WIRELESS SYSTEMS

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