The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs

Feiyuan Yang; Stefano Dalcanale; Mark Gajda; Serge Karboyan; Michael J Uren; Martin H H Kuball

doi:10.1109/TED.2020.2968212

The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs

Feiyuan Yang, Stefano Dalcanale, Mark Gajda, Serge Karboyan, Michael J Uren, Martin H H Kuball

Research output: Contribution to journal › Article (Academic Journal) › peer-review

33 Citations (Scopus)

Original language	English
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	3
DOIs	https://doi.org/10.1109/TED.2020.2968212
Publication status	Published - 10 Feb 2020

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CDTR

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10.1109/TED.2020.2968212

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High Performance Buffers for RF GaN Electronics
Kuball, M. H. H. (Principal Investigator)
17/11/16 → 16/05/20
Project: Research

Cite this

@article{9d280fc6d9094b39a348b48863b98439,

title = "The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs",

author = "Feiyuan Yang and Stefano Dalcanale and Mark Gajda and Serge Karboyan and Uren, \{Michael J\} and Kuball, \{Martin H H\}",

year = "2020",

month = feb,

day = "10",

doi = "10.1109/TED.2020.2968212",

language = "English",

volume = "67",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "3",

}

TY - JOUR

T1 - The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs

AU - Yang, Feiyuan

AU - Dalcanale, Stefano

AU - Gajda, Mark

AU - Karboyan, Serge

AU - Uren, Michael J

AU - Kuball, Martin H H

PY - 2020/2/10

Y1 - 2020/2/10

U2 - 10.1109/TED.2020.2968212

DO - 10.1109/TED.2020.2968212

M3 - Article (Academic Journal)

SN - 0018-9383

VL - 67

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs

Research Groups and Themes

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High Performance Buffers for RF GaN Electronics

Cite this