The impact of silicon carbide technology on grid-connected Distributed Energy resources

S. Jahdi; O. Alatise; P. A. Mawby

doi:10.1109/ISGTEurope.2013.6695233

The impact of silicon carbide technology on grid-connected Distributed Energy resources

S. Jahdi, O. Alatise, P. A. Mawby

Department of Electrical & Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

7 Citations (Scopus)

46 Downloads (Pure)

Abstract

Distributed Energy sources can be connected to the electrical grid using power electronic converters traditionally implemented in silicon insulated gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs) and PiN diodes. However, recently developed SiC technology can improve energy conversion efficiency as well as power density. To investigate the benefits provided by SiC technology, experimentally calibrated SiC MOSFET models have been modeled in multilevel voltage sourced converters (VSCs) to analyze the generated harmonics, converter temperature rise, switching losses and filtering requirements. Models show that converters implemented in SiC MOSFETs operate at 25-75% less temperature compared with silicon IGBTs, potentially simplifying cooling. Also, SiC MOSFETs generate ∼2% less THD for the same switching frequency and can reduce the switching loss by up to 82% compared to silicon devices.

Original language	English
Title of host publication	2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)	9781479929849
DOIs	https://doi.org/10.1109/ISGTEurope.2013.6695233
Publication status	Published - 6 Jan 2014
Event	2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013 - Lyngby, Denmark Duration: 6 Oct 2013 → 9 Oct 2013

Conference

Conference	2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013
Country/Territory	Denmark
City	Lyngby
Period	6/10/13 → 9/10/13

Keywords

Silicon Carbide FETs
Switching Losses
Total Harmonics Distortion
Voltage Source Converters

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10.1109/ISGTEurope.2013.6695233

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title = "The impact of silicon carbide technology on grid-connected Distributed Energy resources",

abstract = "Distributed Energy sources can be connected to the electrical grid using power electronic converters traditionally implemented in silicon insulated gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs) and PiN diodes. However, recently developed SiC technology can improve energy conversion efficiency as well as power density. To investigate the benefits provided by SiC technology, experimentally calibrated SiC MOSFET models have been modeled in multilevel voltage sourced converters (VSCs) to analyze the generated harmonics, converter temperature rise, switching losses and filtering requirements. Models show that converters implemented in SiC MOSFETs operate at 25-75% less temperature compared with silicon IGBTs, potentially simplifying cooling. Also, SiC MOSFETs generate ∼2% less THD for the same switching frequency and can reduce the switching loss by up to 82% compared to silicon devices.",

keywords = "Silicon Carbide FETs, Switching Losses, Total Harmonics Distortion, Voltage Source Converters",

author = "S. Jahdi and O. Alatise and Mawby, {P. A.}",

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booktitle = "2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013",

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Jahdi, S, Alatise, O & Mawby, PA 2014, The impact of silicon carbide technology on grid-connected Distributed Energy resources. in 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013., 6695233, Institute of Electrical and Electronics Engineers (IEEE), 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013, Lyngby, Denmark, 6/10/13. https://doi.org/10.1109/ISGTEurope.2013.6695233

The impact of silicon carbide technology on grid-connected Distributed Energy resources. / Jahdi, S.; Alatise, O.; Mawby, P. A.
2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013. Institute of Electrical and Electronics Engineers (IEEE), 2014. 6695233.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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T1 - The impact of silicon carbide technology on grid-connected Distributed Energy resources

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AU - Mawby, P. A.

PY - 2014/1/6

Y1 - 2014/1/6

N2 - Distributed Energy sources can be connected to the electrical grid using power electronic converters traditionally implemented in silicon insulated gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs) and PiN diodes. However, recently developed SiC technology can improve energy conversion efficiency as well as power density. To investigate the benefits provided by SiC technology, experimentally calibrated SiC MOSFET models have been modeled in multilevel voltage sourced converters (VSCs) to analyze the generated harmonics, converter temperature rise, switching losses and filtering requirements. Models show that converters implemented in SiC MOSFETs operate at 25-75% less temperature compared with silicon IGBTs, potentially simplifying cooling. Also, SiC MOSFETs generate ∼2% less THD for the same switching frequency and can reduce the switching loss by up to 82% compared to silicon devices.

AB - Distributed Energy sources can be connected to the electrical grid using power electronic converters traditionally implemented in silicon insulated gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs) and PiN diodes. However, recently developed SiC technology can improve energy conversion efficiency as well as power density. To investigate the benefits provided by SiC technology, experimentally calibrated SiC MOSFET models have been modeled in multilevel voltage sourced converters (VSCs) to analyze the generated harmonics, converter temperature rise, switching losses and filtering requirements. Models show that converters implemented in SiC MOSFETs operate at 25-75% less temperature compared with silicon IGBTs, potentially simplifying cooling. Also, SiC MOSFETs generate ∼2% less THD for the same switching frequency and can reduce the switching loss by up to 82% compared to silicon devices.

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The impact of silicon carbide technology on grid-connected Distributed Energy resources

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