The impact of silicon carbide technology on grid-connected Distributed Energy resources

S. Jahdi, O. Alatise, P. A. Mawby

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

3 Citations (Scopus)

Abstract

Distributed Energy sources can be connected to the electrical grid using power electronic converters traditionally implemented in silicon insulated gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs) and PiN diodes. However, recently developed SiC technology can improve energy conversion efficiency as well as power density. To investigate the benefits provided by SiC technology, experimentally calibrated SiC MOSFET models have been modeled in multilevel voltage sourced converters (VSCs) to analyze the generated harmonics, converter temperature rise, switching losses and filtering requirements. Models show that converters implemented in SiC MOSFETs operate at 25-75% less temperature compared with silicon IGBTs, potentially simplifying cooling. Also, SiC MOSFETs generate ∼2% less THD for the same switching frequency and can reduce the switching loss by up to 82% compared to silicon devices.

Original languageEnglish
Title of host publication2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013
DOIs
Publication statusPublished - 1 Dec 2013
Event2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013 - Lyngby, Denmark
Duration: 6 Oct 20139 Oct 2013

Conference

Conference2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013
CountryDenmark
CityLyngby
Period6/10/139/10/13

Keywords

  • Silicon Carbide FETs
  • Switching Losses
  • Total Harmonics Distortion
  • Voltage Source Converters

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    Jahdi, S., Alatise, O., & Mawby, P. A. (2013). The impact of silicon carbide technology on grid-connected Distributed Energy resources. In 2013 4th IEEE/PES Innovative Smart Grid Technologies Europe, ISGT Europe 2013 [6695233] https://doi.org/10.1109/ISGTEurope.2013.6695233