The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and mosfeTs

Saeed Jahdi, Olayiwola Alatise, Petros Alexakis, Li Ran, Philip Mawby

Research output: Contribution to journalArticle (Academic Journal)peer-review

37 Citations (Scopus)
181 Downloads (Pure)

Abstract

Silicon carbide Schottky barrier diodes (SiC-SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot, and damping are shown to depend on the ambient temperature and the metal-oxide-semiconductor field-effect transistor (MOSFET) switching rate (dIDS/dt). In this paper, it is shown experimentally and theoretically that dIDS/dt increases with temperature for a given gate resistance during MOSFET turn-on and reduces with increasing temperature during turn-off. As a result, the oscillation frequency and peak voltage overshoot of the SiC-SBD increases with temperature during diode turn-off. This temperature dependence of the diode ringing reduces at higher dIDS/dt and increases at lower dIDS/dt. It is also shown that the rate of change of dIDS/dt with temperature (d2IDS/dtdT) is strongly dependent on RG and using fundamental device physics equations, this behavior is predictable. The dependence of the switching energy on dIDS/dt and temperature in 1.2-kV SiC-SBDs is measured over a wide temperature range (-75° C to 200° C). The diode switching energy analysis shows that the losses at low dIDS/dt are dominated by the transient duration and losses at high dIDS/dt are dominated by electromagnetic oscillations. The model developed and results obtained are important for predicting electromagnetic interference, reliability, and losses in SiC MOSFET/SBDs.

Original languageEnglish
Pages (from-to)163-171
Number of pages9
JournalIEEE Transactions on Industrial Electronics
Volume62
Issue number1
Early online date29 May 2014
DOIs
Publication statusPublished - 1 Jan 2015

Keywords

  • Oscillation
  • power metal-oxide-semiconductor field-effect transistor (MOSFET)
  • Schottky diodes
  • silicon carbide (SiC)
  • temperature.

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