Abstract
Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.
Original language | English |
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Article number | 4 |
Pages (from-to) | 1580-1583 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 39 |
Issue number | 10 |
Early online date | 29 Aug 2018 |
DOIs | |
Publication status | Published - Oct 2018 |
Structured keywords
- CDTR
Keywords
- AlGaN/GaN HEMT
- Aluminum gallium nitride
- Capacitance
- Conductivity
- Current measurement
- Electric breakdown
- Epitaxial growth
- HEMTs
- Ohmic contacts
- Vertical breakdown
- Vertical leakage
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Dive into the research topics of 'The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown'. Together they form a unique fingerprint.Datasets
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B. Rackauskas et al. EDL 2018
Rackauskas, B. (Creator) & Kuball, M. H. H. (Data Manager), University of Bristol, 21 Aug 2018
DOI: 10.5523/bris.3vjckq2z2mh5l2l0jk8h6ldjn3, http://data.bris.ac.uk/data/dataset/3vjckq2z2mh5l2l0jk8h6ldjn3
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