The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben Rackauskas; Michael J. Uren; Steve Stoffels; Ming Zhao; Benoit Bakeroot; Stefaan Decoutere; Martin Kuball

doi:10.1109/LED.2018.2866613

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Benoit Bakeroot, Stefaan Decoutere, Martin Kuball

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be _~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

Original language	English
Article number	4
Pages (from-to)	1580-1583
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	39
Issue number	10
Early online date	29 Aug 2018
DOIs	https://doi.org/10.1109/LED.2018.2866613
Publication status	Published - Oct 2018

Structured keywords

CDTR

Keywords

AlGaN/GaN HEMT
Aluminum gallium nitride
Capacitance
Conductivity
Current measurement
Electric breakdown
Epitaxial growth
HEMTs
Ohmic contacts
Vertical breakdown
Vertical leakage

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10.1109/LED.2018.2866613

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B. Rackauskas et al. EDL 2018
Rackauskas, B. (Creator) & Kuball, M. H. H. (Data Manager), University of Bristol, 21 Aug 2018
DOI: 10.5523/bris.3vjckq2z2mh5l2l0jk8h6ldjn3, http://data.bris.ac.uk/data/dataset/3vjckq2z2mh5l2l0jk8h6ldjn3
Dataset

Cite this

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title = "The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown",

abstract = "Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.",

keywords = "AlGaN/GaN HEMT, Aluminum gallium nitride, Capacitance, Conductivity, Current measurement, Electric breakdown, Epitaxial growth, HEMTs, Ohmic contacts, Vertical breakdown, Vertical leakage",

author = "Ben Rackauskas and Uren, {Michael J.} and Steve Stoffels and Ming Zhao and Benoit Bakeroot and Stefaan Decoutere and Martin Kuball",

year = "2018",

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doi = "10.1109/LED.2018.2866613",

language = "English",

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pages = "1580--1583",

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T1 - The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

AU - Rackauskas, Ben

AU - Uren, Michael J.

AU - Stoffels, Steve

AU - Zhao, Ming

AU - Bakeroot, Benoit

AU - Decoutere, Stefaan

AU - Kuball, Martin

PY - 2018/10

Y1 - 2018/10

N2 - Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

AB - Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

KW - AlGaN/GaN HEMT

KW - Aluminum gallium nitride

KW - Capacitance

KW - Conductivity

KW - Current measurement

KW - Electric breakdown

KW - Epitaxial growth

KW - HEMTs

KW - Ohmic contacts

KW - Vertical breakdown

KW - Vertical leakage

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U2 - 10.1109/LED.2018.2866613

DO - 10.1109/LED.2018.2866613

M3 - Article (Academic Journal)

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EP - 1583

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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M1 - 4

ER -

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

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B. Rackauskas et al. EDL 2018

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