The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben Rackauskas; Michael J. Uren; Steve Stoffels; Ming Zhao; Benoit Bakeroot; Stefaan Decoutere; Martin Kuball

doi:10.1109/LED.2018.2866613

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Benoit Bakeroot, Stefaan Decoutere, Martin Kuball

Research output: Contribution to journal › Article (Academic Journal)

218 Downloads (Pure)

Abstract

Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be _~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

Original language	English
Article number	4
Pages (from-to)	1580-1583
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	39
Issue number	10
Early online date	29 Aug 2018
DOIs	https://doi.org/10.1109/LED.2018.2866613
Publication status	Published - Oct 2018

Structured keywords

CDTR

Keywords

AlGaN/GaN HEMT
Aluminum gallium nitride
Capacitance
Conductivity
Current measurement
Electric breakdown
Epitaxial growth
HEMTs
Ohmic contacts
Vertical breakdown
Vertical leakage

Access to Document

10.1109/LED.2018.2866613

Full-text PDF (final published version)
This is the final published version of the article (version of record). It first appeared online via IEEE at https://doi.org/10.1109/LED.2018.2866613 . Please refer to any applicable terms of use of the publisher.
Final published version, 802 KBLicence: CC BY

Link to publication in Scopus

Fingerprint Dive into the research topics of 'The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown'. Together they form a unique fingerprint.

Datasets

B. Rackauskas et al. EDL 2018

Rackauskas, B. (Creator) & Kuball, M. H. H. (Data Manager), University of Bristol, 21 Aug 2018

DOI: 10.5523/bris.3vjckq2z2mh5l2l0jk8h6ldjn3, http://data.bris.ac.uk/data/dataset/3vjckq2z2mh5l2l0jk8h6ldjn3

Dataset

Cite this

Rackauskas, B., Uren, M. J., Stoffels, S., Zhao, M., Bakeroot, B., Decoutere, S., & Kuball, M. (2018). The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown. IEEE Electron Device Letters, 39(10), 1580-1583. [4]. https://doi.org/10.1109/LED.2018.2866613

@article{2c804bf444334934a50413ccbf42c1fd,

title = "The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown",

abstract = "Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.",

keywords = "AlGaN/GaN HEMT, Aluminum gallium nitride, Capacitance, Conductivity, Current measurement, Electric breakdown, Epitaxial growth, HEMTs, Ohmic contacts, Vertical breakdown, Vertical leakage",

author = "Ben Rackauskas and Uren, {Michael J.} and Steve Stoffels and Ming Zhao and Benoit Bakeroot and Stefaan Decoutere and Martin Kuball",

year = "2018",

month = oct,

doi = "10.1109/LED.2018.2866613",

language = "English",

volume = "39",

pages = "1580--1583",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "10",

}

TY - JOUR

T1 - The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

AU - Rackauskas, Ben

AU - Uren, Michael J.

AU - Stoffels, Steve

AU - Zhao, Ming

AU - Bakeroot, Benoit

AU - Decoutere, Stefaan

AU - Kuball, Martin

PY - 2018/10

Y1 - 2018/10

N2 - Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

AB - Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

KW - AlGaN/GaN HEMT

KW - Aluminum gallium nitride

KW - Capacitance

KW - Conductivity

KW - Current measurement

KW - Electric breakdown

KW - Epitaxial growth

KW - HEMTs

KW - Ohmic contacts

KW - Vertical breakdown

KW - Vertical leakage

UR - http://www.scopus.com/inward/record.url?scp=85052642686&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2866613

DO - 10.1109/LED.2018.2866613

M3 - Article (Academic Journal)

AN - SCOPUS:85052642686

VL - 39

SP - 1580

EP - 1583

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

M1 - 4

ER -