The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben Rackauskas; Michael J. Uren; Steve Stoffels; Ming Zhao; Benoit Bakeroot; Stefaan Decoutere; Martin Kuball

doi:10.1109/LED.2018.2866613

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Benoit Bakeroot, Stefaan Decoutere, Martin Kuball

Research output: Contribution to journal › Article (Academic Journal) › peer-review

8 Citations (Scopus)

470 Downloads (Pure)

Abstract

Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be _~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

Original language	English
Article number	4
Pages (from-to)	1580-1583
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	39
Issue number	10
Early online date	29 Aug 2018
DOIs	https://doi.org/10.1109/LED.2018.2866613
Publication status	Published - Oct 2018

Research Groups and Themes

CDTR

Keywords

AlGaN/GaN HEMT
Aluminum gallium nitride
Capacitance
Conductivity
Current measurement
Electric breakdown
Epitaxial growth
HEMTs
Ohmic contacts
Vertical breakdown
Vertical leakage

Access to Document

10.1109/LED.2018.2866613

Full-text PDF (final published version)
This is the final published version of the article (version of record). It first appeared online via IEEE at https://doi.org/10.1109/LED.2018.2866613 . Please refer to any applicable terms of use of the publisher.
Final published version, 802 KBLicence: CC BY

Handle.net

Persistent link

Cite this

@article{2c804bf444334934a50413ccbf42c1fd,

title = "The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown",

abstract = "Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be \textasciitilde{}1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.",

keywords = "AlGaN/GaN HEMT, Aluminum gallium nitride, Capacitance, Conductivity, Current measurement, Electric breakdown, Epitaxial growth, HEMTs, Ohmic contacts, Vertical breakdown, Vertical leakage",

author = "Ben Rackauskas and Uren, \{Michael J.\} and Steve Stoffels and Ming Zhao and Benoit Bakeroot and Stefaan Decoutere and Martin Kuball",

year = "2018",

month = oct,

doi = "10.1109/LED.2018.2866613",

language = "English",

volume = "39",

pages = "1580--1583",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "10",

}

TY - JOUR

T1 - The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

AU - Rackauskas, Ben

AU - Uren, Michael J.

AU - Stoffels, Steve

AU - Zhao, Ming

AU - Bakeroot, Benoit

AU - Decoutere, Stefaan

AU - Kuball, Martin

PY - 2018/10

Y1 - 2018/10

N2 - Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

AB - Enhanced leakage paths below Ti/Al based contacts to GaN-on-Si HEMTs have been identified and studied. Through a novel use of the quasi-static capacitance-voltage technique, the depth of these preferential leakage paths was determined to be ~1.6μm, extending down into the superlattice strain relief layer. Along these paths, the material resistivity was reduced by more than a factor of 100 compared to the uncontacted epitaxy. It is suggested that the cause of the additional leakage is decoration of dislocations. This result is important for understanding buffer transport, a critical parameter for breakdown and buffer charge storage.

KW - AlGaN/GaN HEMT

KW - Aluminum gallium nitride

KW - Capacitance

KW - Conductivity

KW - Current measurement

KW - Electric breakdown

KW - Epitaxial growth

KW - HEMTs

KW - Ohmic contacts

KW - Vertical breakdown

KW - Vertical leakage

UR - https://www.scopus.com/pages/publications/85052642686

U2 - 10.1109/LED.2018.2866613

DO - 10.1109/LED.2018.2866613

M3 - Article (Academic Journal)

AN - SCOPUS:85052642686

SN - 0741-3106

VL - 39

SP - 1580

EP - 1583

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 4

ER -

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Abstract

Research Groups and Themes

Keywords

Access to Document

Handle.net

Other files and links

Fingerprint

B. Rackauskas et al. EDL 2018

Cite this

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Abstract

Research Groups and Themes

Keywords

Access to Document

Handle.net

Other files and links

Fingerprint

Datasets

B. Rackauskas et al. EDL 2018

Cite this