The influence of the annealing ambient on strain and doping in GaN during high-temperature processing

MHH Kuball, JM Hayes, A Bell, I Harrison, D Korakakis, CT Foxon

Research output: Contribution to journalArticle (Academic Journal)peer-review

5 Citations (Scopus)
Translated title of the contributionThe influence of the annealing ambient on strain and doping in GaN during high-temperature processing
Original languageEnglish
Pages (from-to)759 - 762
Journalphysica status solidi (a)
Volume176
Publication statusPublished - 1999

Bibliographical note

Publisher: Wiley-VCH

Structured keywords

  • CDTR

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