The influence of the annealing ambient on strain and doping in GaN during high-temperature processing

MHH Kuball, JM Hayes, A Bell, I Harrison, D Korakakis, CT Foxon

Research output: Contribution to journal › Article (Academic Journal) › peer-review

5 Citations (Scopus)

Translated title of the contribution	The influence of the annealing ambient on strain and doping in GaN during high-temperature processing
Original language	English
Pages (from-to)	759 - 762
Journal	physica status solidi (a)
Volume	176
Publication status	Published - 1999

Publisher: Wiley-VCH

Research Groups and Themes

@article{8d4f96cc029c4b2e8daa4da878c86824,

title = "The influence of the annealing ambient on strain and doping in GaN during high-temperature processing",

author = "MHH Kuball and JM Hayes and A Bell and I Harrison and D Korakakis and CT Foxon",

note = "Publisher: Wiley-VCH",

year = "1999",

language = "English",

volume = "176",

pages = "759 -- 762",

journal = "physica status solidi (a)",

issn = "1862-6319",

publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - The influence of the annealing ambient on strain and doping in GaN during high-temperature processing

AU - Kuball, MHH

AU - Hayes, JM

AU - Bell, A

AU - Harrison, I

AU - Korakakis, D

AU - Foxon, CT

N1 - Publisher: Wiley-VCH

PY - 1999

Y1 - 1999

M3 - Article (Academic Journal)

SN - 1862-6319

VL - 176

SP - 759

EP - 762

JO - physica status solidi (a)

JF - physica status solidi (a)

ER -