The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells

James T. Griffiths; Fabrice Oehler; Fengzai Tang; Siyuan Zhang; Wai Yuen Fu; Tongtong Zhu; Scott D. Findlay; Changlin Zheng; Joanne Etheridge; Tomas L Martin; Paul A J Bagot; Michael P. Moody; Danny Sutherland; Philip Dawson; Menno J. Kappers; Colin J. Humphreys; Rachel A. Oliver

doi:10.1063/1.4948299

The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells

James T. Griffiths, Fabrice Oehler, Fengzai Tang, Siyuan Zhang, Wai Yuen Fu, Tongtong Zhu, Scott D. Findlay, Changlin Zheng, Joanne Etheridge, Tomas L Martin, Paul A J Bagot, Michael P. Moody, Danny Sutherland, Philip Dawson, Menno J. Kappers, Colin J. Humphreys, Rachel A. Oliver

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Abstract

Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.

Original language	English
Article number	175703
Number of pages	6
Journal	Journal of Applied Physics
Volume	119
Issue number	17
Early online date	2 May 2016
DOIs	https://doi.org/10.1063/1.4948299
Publication status	Published - 7 May 2016

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Griffiths, J. T., Oehler, F., Tang, F., Zhang, S., Fu, W. Y., Zhu, T., Findlay, S. D., Zheng, C., Etheridge, J., Martin, T. L., Bagot, P. A. J., Moody, M. P., Sutherland, D., Dawson, P., Kappers, M. J., Humphreys, C. J., & Oliver, R. A. (2016). The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells. Journal of Applied Physics, 119(17), Article 175703. https://doi.org/10.1063/1.4948299

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title = "The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells",

abstract = "Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.",

author = "Griffiths, {James T.} and Fabrice Oehler and Fengzai Tang and Siyuan Zhang and Fu, {Wai Yuen} and Tongtong Zhu and Findlay, {Scott D.} and Changlin Zheng and Joanne Etheridge and Martin, {Tomas L} and Bagot, {Paul A J} and Moody, {Michael P.} and Danny Sutherland and Philip Dawson and Kappers, {Menno J.} and Humphreys, {Colin J.} and Oliver, {Rachel A.}",

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AU - Griffiths, James T.

AU - Oehler, Fabrice

AU - Tang, Fengzai

AU - Zhang, Siyuan

AU - Fu, Wai Yuen

AU - Zhu, Tongtong

AU - Findlay, Scott D.

AU - Zheng, Changlin

AU - Etheridge, Joanne

AU - Martin, Tomas L

AU - Bagot, Paul A J

AU - Moody, Michael P.

AU - Sutherland, Danny

AU - Dawson, Philip

AU - Kappers, Menno J.

AU - Humphreys, Colin J.

AU - Oliver, Rachel A.

PY - 2016/5/7

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N2 - Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.

AB - Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.

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The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells

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