The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells

James T. Griffiths, Fabrice Oehler, Fengzai Tang, Siyuan Zhang, Wai Yuen Fu, Tongtong Zhu, Scott D. Findlay, Changlin Zheng, Joanne Etheridge, Tomas L Martin, Paul A J Bagot, Michael P. Moody, Danny Sutherland, Philip Dawson, Menno J. Kappers, Colin J. Humphreys, Rachel A. Oliver

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Abstract

Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.
Original languageEnglish
Article number175703
Number of pages6
JournalJournal of Applied Physics
Volume119
Issue number17
Early online date2 May 2016
DOIs
Publication statusPublished - 7 May 2016

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