The nature of magnesium precipitation in GaN and AlGaN deposited by epitaxial lateral overgrowth

R Liu; A Bell; FA Ponce; D Cherns; H Amano; I Akasaki

The nature of magnesium precipitation in GaN and AlGaN deposited by epitaxial lateral overgrowth

R Liu, A Bell, FA Ponce, D Cherns, H Amano, I Akasaki

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth facet appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.

Translated title of the contribution	The nature of magnesium precipitation in GaN and AlGaN deposited by epitaxial lateral overgrowth
Original language	English
Title of host publication	Materials Research Society 2002 Fall Meeting in Boston
Pages	L1.11
Number of pages	6
Volume	743
Publication status	Published - 2003

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Conference Proceedings/Title of Journal: MRS Proceedings Symposium L
Conference Organiser: Materials Research Society

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@inproceedings{71a15980771b4477b0d41469ef56b00a,

title = "The nature of magnesium precipitation in GaN and AlGaN deposited by epitaxial lateral overgrowth",

abstract = "Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth facet appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.",

author = "R Liu and A Bell and FA Ponce and D Cherns and H Amano and I Akasaki",

note = "Conference Proceedings/Title of Journal: MRS Proceedings Symposium L Conference Organiser: Materials Research Society",

year = "2003",

language = "English",

volume = "743",

pages = "L1.11",

booktitle = "Materials Research Society 2002 Fall Meeting in Boston",

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TY - GEN

T1 - The nature of magnesium precipitation in GaN and AlGaN deposited by epitaxial lateral overgrowth

AU - Liu, R

AU - Bell, A

AU - Ponce, FA

AU - Cherns, D

AU - Amano, H

AU - Akasaki, I

N1 - Conference Proceedings/Title of Journal: MRS Proceedings Symposium L Conference Organiser: Materials Research Society

PY - 2003

Y1 - 2003

N2 - Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth facet appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.

AB - Different magnesium incorporation behavior has been observed in heavily Mg-doped AlGaN epitaxial layers. The films were grown by metal-organic vapor phase epitaxy involving a lateral overgrowth technique on patterned sapphire substrates. TEM observations show that direct growth on sapphire exhibits pyramidal defects, while lateral overgrowth is homogeneous and free of structural defects. The orientation of the growth front significantly influences the microstructure, and the {0001} growth facet appears to be essential for the formation of the pyramidal defects. In addition, cylindrical and funnel-shaped nanopipes have been observed at dislocations with an edge component. The relationship between Mg segregation and these defects is discussed, and formation mechanisms are proposed taking into consideration the orientation of the growth front.

M3 - Conference Contribution (Conference Proceeding)

VL - 743

SP - L1.11

BT - Materials Research Society 2002 Fall Meeting in Boston

ER -

The nature of magnesium precipitation in GaN and AlGaN deposited by epitaxial lateral overgrowth

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